Journal of Semiconductors

Archive

Volume 27, Issue 2, Feb 2006

其他

Electronic Structure of Semiconductor Nanocrystals

Li Jingbo, Wang Linwang, Wei Suhuai

Chin. J. Semicond. 2006, 27(2): 191

InAs Wires on InP (001)

Wu Ju, Wang Zhanguo

Chin. J. Semicond. 2006, 27(2): 197
PAPERS

Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction

Xu Wen

Chin. J. Semicond. 2006, 27(2): 204

Quantum Measurement of Single Electron State by a Mesoscopic Detector

Hu Xuening, Luo Junyan, Li Xinqi

Chin. J. Semicond. 2006, 27(2): 218

Study of NiSi/Si Interface by Cross-Section Transmission Electron Microscopy

Jiang Yulong, Ru Guoping, Qu Xinping, Li Bingzong

Chin. J. Semicond. 2006, 27(2): 223

Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

Ou Guping, Song Zhen, Gui Wenming, Zhang Fujia

Chin. J. Semicond. 2006, 27(2): 229

Analysis of PTCDA/ITO Surface and Interface Using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy

Tang Ning, Shen Bo, Wang Maojun, Yang Zhijian, Xu Ke, Zhang Guoyi, Gui Yongsheng, Zhu Bo, Guo Shaoling, Chu Junhao

Chin. J. Semicond. 2006, 27(2): 235

Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure

Fu Zhuxi, Sun Xiankai, Zhu Junjie, Lin Bixia

Chin. J. Semicond. 2006, 27(2): 239

Decarbonization and Decolorization of Large Sapphire Crystals Grown by the Temperature Gradient Technique

Xu Jun, Zhou Guoqing, Deng Peizhen, Si Jiliang, Qian Xiaobo, Wang Yinzhen, Zhou Shengming, Zhou Yongzong, Zhu Renyuan

Chin. J. Semicond. 2006, 27(2): 245

Fabrication and Emission Properties of a n-ZnO/p-GaN Heterojunction Light-Emitting Diode

Zhou Xin, Gu Shulin, Zhu Shunming, Ye Jiandong, Liu Wei, Liu Songmin, Hu Liqun, Zheng Youdou, Zhang Rong, Shi Yi

Chin. J. Semicond. 2006, 27(2): 249

Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure

Chen Zhiming, Ren Ping, Pu Hongbin

Chin. J. Semicond. 2006, 27(2): 254

Fine-Grain Sleep Transistor Insertion for Leakage Reduction

Yang Huazhong, Wang Yu, Lin Hai, Luo Rong, Wang Hui

Chin. J. Semicond. 2006, 27(2): 258

S-Band 1mm SiC MESFET with 2W Output on Semi-Insulated SiC Substrate

Cai Shujun, Pan Hongshu, Chen Hao, Li Liang, Zhao Zhenping

Chin. J. Semicond. 2006, 27(2): 266

High Power SiGe X-Band (8～10GHz) Heterojunction Bipolar Transistors and Amplifiers

Ma Zhenqiang, Wang Guogong, Jiang Ningyue, Ponchak G E, Alterovitz S A

Chin. J. Semicond. 2006, 27(2): 270

Numerical Explanation of Slow Transients in an AlGaN/GaN HEMT

Zhang Jinfeng, Hao Yue

Chin. J. Semicond. 2006, 27(2): 276

Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs

Gao Jinxia, Zhang Yimen, Zhang Yuming

Chin. J. Semicond. 2006, 27(2): 283

Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods

Zhao Yi, Wan Xinggong, Xu Xiangming, Cao Gang, Bu Jiao

Chin. J. Semicond. 2006, 27(2): 290

Axial Local Lifetime Control in High-Voltage Diodes Based on Proximity Gettering of Platinum by Proton-Implantation Damages

Jia Yunpeng, Zhang Bin, Sun Yuechen, Kang Baowei

Chin. J. Semicond. 2006, 27(2): 294

Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT

Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, Lu Jing, Ma Jie, Xie Changqing, Yu Zhiping

Chin. J. Semicond. 2006, 27(2): 298

Monte Carlo Simulation of Impurity Scattering Effect in Resonant-Phonon-Assisted Terahertz Quantum-Cascade Lasers

Cao Juncheng, Lü Jingtao

Chin. J. Semicond. 2006, 27(2): 304

Fabrication and Numerical Simulation of a Micromachined Contact Cantilever RF-MEMS Switch

Sun Jianhai, Cui Dafu, Xiao Jiang

Chin. J. Semicond. 2006, 27(2): 309

A New CMOS Image Sensor with a High Fill Factor and the Dynamic Digital Double Sampling Technique

Liu Yu, Wang Guoyu

Chin. J. Semicond. 2006, 27(2): 313

A Low Power SRAM/SOI Memory Cell Design

Yu Yang, Zhao Qian, Shao Zhibiao

Chin. J. Semicond. 2006, 27(2): 318

Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS

Chen Hongda, Gao Peng, Mao Luhong, Huang Jiale

Chin. J. Semicond. 2006, 27(2): 323

Tapered Multimode Interference Combiners for Coherent Receivers

Wu Zhigang, Zhang Weigang, Wang Zhi, Kai Guiyun, Yuan Shuzhong, Dong Xiaoyi, Utaka Katsuyuki, Wada Yasuo

Chin. J. Semicond. 2006, 27(2): 328

Growth of ZnO Single Crystal by Chemical Vapor Transport Method

Zhao Youwen, Dong Zhiyuan, Wei Xuecheng, Duan Manlong, Li Jinmin

Chin. J. Semicond. 2006, 27(2): 336

Characteristics of Annealing of InN Films

Xie Zili, Zhang Rong, Xiu Xiangqian, Bi Zhaoxia, Liu Bin, Pu Lin, Chen Dunjun, Han Ping, Gu Shulin, Jiang Ruoliang, Zhu Shunming, , Zhao Hong, Shi Yi

Chin. J. Semicond. 2006, 27(2): 340

Photoluminescence and Application of Nonlinear Optical Property of nc-Si-SiO2 Films

Guo Hengqun, Lin Shangxin, Wang Qiming

Chin. J. Semicond. 2006, 27(2): 345

Study of Thermal Characteristics of Semiconductor Light-Emitting Devices

Zhang Yuezong, Feng Shiwei, Xie Xuesong, Li Ying, Yang Ji, Sun Jingying, Lü Changzhi

Chin. J. Semicond. 2006, 27(2): 350

An ADI Method for the Breakdown Voltage Analysis of Thin-Film SOI RESURF Structure with the High-Order Compact Finite Difference

Yu Zongguang, Liu Zhan, Wang Guozhang, Xu Ziming

Chin. J. Semicond. 2006, 27(2): 354

Research on CMOS Compatible Integrated Humidity Sensors

Peng Shaohua, Huang Qing’an, Qin Ming, Zhang Zhongping

Chin. J. Semicond. 2006, 27(2): 358

Room-Temperature Operated and Fully Gate-Bias Controlled Memory Devices Based on Self-Assembled InAs/GaAs Quantum Dots

Du Jun, Wang Qingpu, Balocco C, Song A M

Chin. J. Semicond. 2006, 27(2): 363

A Novel Triplexer Design Based on Arrayed Waveguide Grating

Lang Tingting, He Jianjun, He Sailing

Chin. J. Semicond. 2006, 27(2): 368
TECHNICAL PROGRESS

Characterization and Modeling for 0.13μm RF MOSFETs

Chi Yusong, Huang Fengyi, Wu Zhongjie, Zhang Shaoyong, Kong Xiaoming, Wang Zhigong

Chin. J. Semicond. 2006, 27(2): 373