Archive

Volume 29, Issue 11, Nov 2008

• LETTERS

  The Bipolar Field-Effect Transistor:VI.The CMOS Voltage Inverter Circuit(Two-MOS-Gates on Pure-Base)

  Jie Binbin, Sah Chih-Tang

  J. Semicond.  2008, 29(11): 2079
  

  External Quantum Efficiency of Quantum Well Solar Cells

  Lou Chaogang, Yan Ting, Sun Qiang, Xu Jun, Zhang Xiaobing, Lei Wei

  J. Semicond.  2008, 29(11): 2088
  

  A Complete Surface Potential-Based Core Model for Undoped Symmetric Double-Gate MOSFETs

  He Jin, Zhang Lining, Zhang Jian, Fu Yue, Zheng Rui, Zhang Xing

  J. Semicond.  2008, 29(11): 2092
  

  An InGaP/GaAs HBT MIC Power Amplifier with Power Combining at the X-Band

  Chen Yanhu, Shen Huajun, Wang Xiantai, Chen Gaopeng, Liu Xinyu, Yuan Dongfeng, Wang Zuqiang

  J. Semicond.  2008, 29(11): 2098
  

  A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe

  Song Jiayou, Wang Zhigong, Peng Yanjun

  J. Semicond.  2008, 29(11): 2101
  

  A 3GHz Low-Power and Low-Phase-Noise LC VCO with a Self-Biasing Current Source

  Chen Pufeng, Li Zhiqiang, Huang Shuilong, Zhang Haiying, Ye Tianchun

  J. Semicond.  2008, 29(11): 2106
  

  Modeling of High-Voltage LDMOS for PDP Driver ICs

  Li Haisong, Sun Weifeng, Yi Yangbo, Shi Longxing

  J. Semicond.  2008, 29(11): 2110
  

• PAPERS

  Photoluminescence of the Beryllium Acceptor at the Centre of Quantum Wells

  Zheng Weimin, Li Sumei, Lü Yingbo, Wang Aifang, Wu Ailing

  J. Semicond.  2008, 29(11): 2115
  

  The Origin of Multi-Peak Structures Observed in Photoluminescence Spectra of InAs/GaAs Quantum Dots

  Liang Zhimei, Wu Ju, Jin Peng, Lü Xueqin, Wang Zhanguo

  J. Semicond.  2008, 29(11): 2121
  

  The Microstructure Evolution of Intrinsic Microcrystalline Silicon Films and Its Influence on the Photovoltaic Performance of Thin-Film Silicon Solar Cells

  Yuan Yujie, Hou Guofu, Zhang Jianjun, Xue Junming, Zhao Ying, Geng Xinhua

  J. Semicond.  2008, 29(11): 2125
  

  Deposition of p-Type Microcrystalline Silicon Film and Its Application in Microcrystalline Silicon Solar Cells

  Chen Yongsheng, Yang Shi'e, Wang Jianhua, Lu Jingxiao, Gao Xiaoyong, Gu Jinhua, Zheng Wen, Zhao Shangli

  J. Semicond.  2008, 29(11): 2130
  

  Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress

  Hu Shigang, Hao Yue, Ma Xiaohua, Cao Yanrong, Chen Chi, Wu Xiaofeng

  J. Semicond.  2008, 29(11): 2136
  

  Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation

  Sun Ling, Liu Wei, Duan Zhenyong, Xu Zhongyi, Yang Huayue

  J. Semicond.  2008, 29(11): 2143
  

  Back-Gate Effect of SOI LDMOSFETs

  Bi Jinshun, Song Limei, Hai Chaohe, Han Zhengsheng

  J. Semicond.  2008, 29(11): 2148
  

  Output Characteristics of n-Buried-pSOI Sandwiched RF Power LDMOS

  Li Zehong, Wu Lijuan, Zhang Bo, Li Zhaoji

  J. Semicond.  2008, 29(11): 2153
  

  Total Ionizing Dose Radiation Effects of RF PDSOI LDMOS Transistors

  Liu Mengxin, Han Zhengsheng, Bi Jinshun, Fan Xuemei, Liu Gang, Du Huan, Song Limei

  J. Semicond.  2008, 29(11): 2158
  

  Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0.18μm Mixed Mode RFCMOS Technology

  Zhu Kehan, Yu Zongguang, Dong Shurong, Han Yan

  J. Semicond.  2008, 29(11): 2164
  

  Microfabrication and Evaluation of a Silicon MicroelectrodeBased on SOI Wafer

  Sui Xiaohong, Chen Hongda

  J. Semicond.  2008, 29(11): 2169
  

  A Sacrificial Layer Etching Method Applied in Surface Micromachining Using Agitated BHF and Glycerol Solution

  Wang Xiaoning, Yang Zhenchuan, Yan Guizhen

  J. Semicond.  2008, 29(11): 2175
  

  Effect of Width Ratio on the Etching Behavior of Joint Channel Structure

  Wu Changju, Jin Zhonghe, Wang Yuelin

  J. Semicond.  2008, 29(11): 2180
  

  Ohmic Contact Property of Ti/Al/Ni/Au on AlGaN/GaN Heterostructures for Application in Ultraviolet Detectors

  Zhang Junqin, Yang Yintang, Chai Changchun, Li Yuejin, Jia Hujun

  J. Semicond.  2008, 29(11): 2187
  

  Intensity Noise Suppression of an FP Laser by External Injection Locking

  Ren Min, Han Wei, Xie Liang, Chen Wei, Zhang Yan, Ju Yu, Zhang Hongguang, Zhang Banghong, Zhu Ninghua

  J. Semicond.  2008, 29(11): 2192
  

  Design of a Polymer Directional Coupler Electro-Optic Switch with Low Push-Pull Switching Voltage at 1550nm

  Zheng Chuantao, Ma Chunsheng, Yan Xin, Wang Xianyin, Zhang Daming

  J. Semicond.  2008, 29(11): 2197
  

  A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer

  Jin Boshi, Wu Qun, Yang Guohui, Meng Fanyi, Fu Jiahui

  J. Semicond.  2008, 29(11): 2204
  

  High-Consistency Behavior Modeling of a Switched-Capacitor Sigma-Delta Modulator in SIMULINK

  Ou Wei, Wu Xiaobo

  J. Semicond.  2008, 29(11): 2209
  

  Design of a Dedicated Reconfigurable Multiplier in an FPGA

  Yu Hongmin, Chen Stanley L, Liu Zhongli

  J. Semicond.  2008, 29(11): 2218
  

  Development and Analysis of an RF Film Bulk Acoustic Resonator

  Tang Liang, Li Junhong, Hao Zhenhong, Qiao Donghai

  J. Semicond.  2008, 29(11): 2226
  

  A 3V 5.88mW 13b 400kHz Sigma-Delta Modulator with 84dB Dynamic

  Li Zhuo, Yang Huazhong

  J. Semicond.  2008, 29(11): 2232
  

  Design of an Active-RC Low-Pass Filter with Accurate Tuning Architecture

  Chen Fangxiong, Lin Min, Chen Bei, Jia Hailong, Shi Yin, Dai Forster

  J. Semicond.  2008, 29(11): 2238
  

  An Integrated Power Management Unit for a Battery-Operated Wireless Endoscopic System

  Chen Xinkai, Jiang Hanjun, Wang Zhihua

  J. Semicond.  2008, 29(11): 2245
  

  Exciton Recombination in the Coupling Structure of a ZnCdSe Quantum Well and CdSe Quantum Dots

  Jin Hua, Bu Fanliang, Li Lihua, Wang Rong, Zhang Zhenzhong, Zhang Ligong, Zheng Zhuhong, Shen Dezhen

  J. Semicond.  2008, 29(11): 2252
  

  Room Temperature Ferromagnetism in Nanostructure Cu-Doped ZnO

  Liu Huilian, Yang Jinghai, Zhang Yongjun, Wang Yaxin, Wei Maobin, Zhao Liyou

  J. Semicond.  2008, 29(11): 2256
  

  Photoluminescence Properties of ZnO Nanorods Prepared Under Low Temperature

  Lang Jihui, Yang Jinghai, Li Changsheng, Han Qiang, Yang Lili, Wang Dandan, Gao Ming, Liu Xiaoyan

  J. Semicond.  2008, 29(11): 2260
  

  Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD

  Ma Tieying, Li Tie, Liu Wenping, Wang Yuelin

  J. Semicond.  2008, 29(11): 2265
  

  A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness

  Ge Ji, Jin Zhi, Liu Xinyu, Cheng Wei, Wang Xiantai, Chen Gaopeng, Wu Dexin

  J. Semicond.  2008, 29(11): 2270
  

  A CMOS Flyback PWM Controller with Low No-Load Power Consumption

  Zhu Zhangming, Yang Yintang

  J. Semicond.  2008, 29(11): 2275
  

  A Ku Band 30W Pulsed Microwave Power Amplifier Module

  Chen Gaopeng, Chen Xiaojuan, Liu Xinyu, Li Bin

  J. Semicond.  2008, 29(11): 2281
  

  Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

  Lao Yanfeng, Cao Chunfang, Wu Huizhen, Cao Meng, Liu Cheng, Xie Zhengsheng, Gong Qian

  J. Semicond.  2008, 29(11): 2286
  

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