Archive

Volume 30, Issue 11, Nov 2009

• SEMICONDUCTOR PHYSICS

  First principles study of the Be–C co-doped MgB2 system

  Su Xiyu, Zhi Xiaofen, Hou Qinying, Cheng Wei, Liu Jiaxue

  J. Semicond.  2009, 30(11): 112001
  doi: 10.1088/1674-4926/30/11/112001

  Anisotropic polarization due to electron–phonon interactions in graphene

  Li Wuqun, Cao Juncheng

  J. Semicond.  2009, 30(11): 112002
  doi: 10.1088/1674-4926/30/11/112002

  Effects of Sn-doping on morphology and optical properties of CdTe polycrystalline films

  Li Jin, Yang Liny, Jian Jikang, Zou Hua, Sun Yanfei

  J. Semicond.  2009, 30(11): 112003
  doi: 10.1088/1674-4926/30/11/112003

• SEMICONDUCTOR MATERIALS

  Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition

  Xu Shengrui, Zhou Xiaowei, Hao Yue, Mao Wei, Zhang Jincheng, Zhang Zhongfen, Bai Lin, Zhang Jinfeng, Li Zhiming

  J. Semicond.  2009, 30(11): 113001
  doi: 10.1088/1674-4926/30/11/113001

  Influence of the distance between target and substrate on the properties of transparent conducting Al–Zr co-doped zinc oxide thin films

  Zhang Huafu, Liu Hanfa, Zhou Aiping, Yuan Changkun

  J. Semicond.  2009, 30(11): 113002
  doi: 10.1088/1674-4926/30/11/113002

  Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQWgrown by MOCVD

  Liu Naixin, Wang Junxi, Yan Jianchang, Liu Zhe, Ruan Jun, Li Jinmin

  J. Semicond.  2009, 30(11): 113003
  doi: 10.1088/1674-4926/30/11/113003

  Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating

  Li Zhiming, Xu Shengrui, Zhang Jincheng, Chang Yongming, Ni Jingyu, Zhou Xiaowei, Hao Yue

  J. Semicond.  2009, 30(11): 113004
  doi: 10.1088/1674-4926/30/11/113004

• SEMICONDUCTOR DEVICES

  InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures

  Yu Jinyong, Liu Xinyu, Xia Yang

  J. Semicond.  2009, 30(11): 114001
  doi: 10.1088/1674-4926/30/11/114001

  Fabrication and characteristics of the nc-Si/c-Si heterojunction MAGFET

  Zhao Xiaofeng, Wen Dianzhong

  J. Semicond.  2009, 30(11): 114002
  doi: 10.1088/1674-4926/30/11/114002

  Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

  Ni Henan, Wu Liangcai, Song Zhitang, Hui Chun

  J. Semicond.  2009, 30(11): 114003
  doi: 10.1088/1674-4926/30/11/114003

  Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

  Wu Chia-Song, Liu Hsing-Chung

  J. Semicond.  2009, 30(11): 114004
  doi: 10.1088/1674-4926/30/11/114004

  Novel lateral IGBT with n-region controlled anode on SOI substrate

  Chen Wensuo, Xie Gang, Zhang Bo, Li Zehong, Li Zhaoji

  J. Semicond.  2009, 30(11): 114005
  doi: 10.1088/1674-4926/30/11/114005

  A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

  Guo Yufeng, Wang Zhigong, Sheu Gene

  J. Semicond.  2009, 30(11): 114006
  doi: 10.1088/1674-4926/30/11/114006

  Single-mode GaAs/AlGaAs quantum cascade microlasers

  Gao Yu, Liu Junqi, Liu Fengqi, Zhang Wei, Zhang Quande, Liu Wanfeng, Li Lu, Wang Lijun, Wang Zhanguo

  J. Semicond.  2009, 30(11): 114007
  doi: 10.1088/1674-4926/30/11/114007

  A linear array of 980 nm VCSEL and its high temperature operation characteristics

  Zhang Yan, Ning Yongqiang, Wang Ye, Liu Guangyu, Wang Zhenfu, Zhang Xing, Shi Jingjing, Zhang Lisen, Wang Wei, Qin Li, Sun Yanfang, Liu Yun, Wang Lijun

  J. Semicond.  2009, 30(11): 114008
  doi: 10.1088/1674-4926/30/11/114008

  Estimation of electron mobility of n-doped 4, 7-diphenyl-1, 10-phenanthroline using space-charge-limited currents

  Khizar-ul-Haq, Khan M A, Jiang Xueyin, Zhang Zhilin, Zhang Xiaowen, Zhang Liang, Li Jun

  J. Semicond.  2009, 30(11): 114009
  doi: 10.1088/1674-4926/30/11/114009

  Working mechanism of a SiC nanotube NO2 gas sensor

  Ding Ruixue, Yang Yintang, Liu Lianxi

  J. Semicond.  2009, 30(11): 114010
  doi: 10.1088/1674-4926/30/11/114010

  Modeling and discussion of threshold voltage for a multi-floating gate FET pH sensor

  Shi Zhaoxia, Zhu Dazhong

  J. Semicond.  2009, 30(11): 114011
  doi: 10.1088/1674-4926/30/11/114011

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A 10 GHz high-effciency and low phase-noise negative-resistance oscillator optimized with a virtual loop model

  Wang Xiantai, Jin Zhi, Wu Danyu, Shen Huajun, Liu Xinyu

  J. Semicond.  2009, 30(11): 115001
  doi: 10.1088/1674-4926/30/11/115001

  An eighth order channel selection filter for low-IF and zero-IF DVB tuner applications

  Zou Liang, Liao Youchun, Tang Zhangwen

  J. Semicond.  2009, 30(11): 115002
  doi: 10.1088/1674-4926/30/11/115002

  Noise and mismatch optimization for capacitive MEMS readout

  Zhang Chong, Wu Qisong, Yin Tao, Yang Haigang

  J. Semicond.  2009, 30(11): 115003
  doi: 10.1088/1674-4926/30/11/115003

  A low power high gain UWB LNA in 0.18-μm CMOS

  Cai Li, Fu Zhongqian, Huang Lu

  J. Semicond.  2009, 30(11): 115004
  doi: 10.1088/1674-4926/30/11/115004

  Realization of an analog predistortion circuit for RF optical fiber links

  Tian Xuenong, Wang Zhigong, Li Wei

  J. Semicond.  2009, 30(11): 115005
  doi: 10.1088/1674-4926/30/11/115005

  Design of a DTCTGAL circuit and its application

  Wang Pengjun, Li Kunpeng, Mei Fengna

  J. Semicond.  2009, 30(11): 115006
  doi: 10.1088/1674-4926/30/11/115006

  A 12-bit 100 MS/s pipelined ADC with digital background calibration

  Zhou Liren, Luo Lei, Ye Fan, Xu Jun, Ren Junyan

  J. Semicond.  2009, 30(11): 115007
  doi: 10.1088/1674-4926/30/11/115007

  Accurate metamodels of device parameters and their applications in performance modeling and optimization of analog integrated circuits

  Liang Tao, Jia Xinzhang, Chen Junfeng

  J. Semicond.  2009, 30(11): 115008
  doi: 10.1088/1674-4926/30/11/115008

  Circuit design of a novel FPGA chip FDP2008

  Wu Fang, Wang Yabin, Chen Liguang, Wang Jian, Lai Jinmei, Wang Yuan, Tong Jiarong

  J. Semicond.  2009, 30(11): 115009
  doi: 10.1088/1674-4926/30/11/115009

• SEMICONDUCTOR TECHNOLOGY

  Reduction of proximity effect in fabricating nanometer-spaced nanopillars by two-step exposure

  Zhang Yang, Zhang Renping, Han Weihua, Liu Jian, Yang Xiang, Wang Ying, Li Chian Chiu, Yang Fuhua

  J. Semicond.  2009, 30(11): 116001
  doi: 10.1088/1674-4926/30/11/116001

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