Archive

Volume 33, Issue 2, Feb 2012

• INVITED PAPERS

  MOS Capacitance-Voltage Characteristics: V. Methods to Enhance the Trapping Capacitance

  Jie Binbin, Sah Chihtang

  J. Semicond.  2012, 33(2): 021001
  doi: 10.1088/1674-4926/33/2/021001

• SEMICONDUCTOR PHYSICS

  Capacitance-voltage analysis of a high-k dielectric on silicon

  Davinder Rathee, Sandeep K. Arya, Mukesh Kumar

  J. Semicond.  2012, 33(2): 022001
  doi: 10.1088/1674-4926/33/2/022001

  Photoelectric properties of Cu₂ZnSnS₄ thin films deposited by thermal evaporation

  Wu Xinkun, Liu Wei, Cheng Shuying, Lai Yunfeng, Jia Hongjie

  J. Semicond.  2012, 33(2): 022002
  doi: 10.1088/1674-4926/33/2/022002

• SEMICONDUCTOR MATERIALS

  Synthesis and efficient field emission characteristics of patterned ZnO nanowires

  Zhang Yongai, Wu Chaoxing, Zheng Yong, Guo Tailiang

  J. Semicond.  2012, 33(2): 023001
  doi: 10.1088/1674-4926/33/2/023001

  Analysis of the p⁺/p window layer of thin film solar cells by simulation

  Lin Aiguo, Ding Jianning, Yuan Ningyi, Wang Shubo, Chen Guanggui, Lu Chao

  J. Semicond.  2012, 33(2): 023002
  doi: 10.1088/1674-4926/33/2/023002

• SEMICONDUCTOR DEVICES

  Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs

  Rajiv Sharma, Sujata Pandey, Shail Bala Jain

  J. Semicond.  2012, 33(2): 024001
  doi: 10.1088/1674-4926/33/2/024001

  Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFET

  Mei Bo, Bi Jinshun, Li Duoli, Liu Sinan, Han Zhengsheng

  J. Semicond.  2012, 33(2): 024002
  doi: 10.1088/1674-4926/33/2/024002

  Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to backside processes

  Jiang Huaping, Zhang Bo, Liu Chuang, Chen Wanjun, Rao Zugang, Dong Bin

  J. Semicond.  2012, 33(2): 024003
  doi: 10.1088/1674-4926/33/2/024003

  Energy capability enhancement for isolated extended drain NMOS transistors

  Nie Weidong, Wu Jin, Ma Xiaohui, Yu Zongguang

  J. Semicond.  2012, 33(2): 024004
  doi: 10.1088/1674-4926/33/2/024004

  Distributed feedback quantum cascade lasers operating in continuous-wave mode at λ ≈ 7.6 μm

  Zhang Jinchuan, Wang Lijun, Liu Wanfeng, Liu Fengqi, Zhao Lihua, Zhai Shenqiang, Liu Junqi, Wang Zhanguo

  J. Semicond.  2012, 33(2): 024005
  doi: 10.1088/1674-4926/33/2/024005

  Fabrication and temperature dependence of a GaInP/GaAs/Ge tandem solar cell

  Cui Min, Chen Nuofu, Yang Xiaoli, Zhang Han

  J. Semicond.  2012, 33(2): 024006
  doi: 10.1088/1674-4926/33/2/024006

• SEMICONDUCTOR INTEGRATED CIRCUITS

  S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT

  Z. Hamaizia, N. Sengouga, M. C. E. Yagoub, M. Missous

  J. Semicond.  2012, 33(2): 025001
  doi: 10.1088/1674-4926/33/2/025001

  Analysis and implementation of an improved recycling folded cascode amplifier

  Li Yilei, Han Kefeng, Yan Na, Tan Xi, Min Hao

  J. Semicond.  2012, 33(2): 025002
  doi: 10.1088/1674-4926/33/2/025002

  A binary-weighted 64-dB programmable gain amplifier with a DCOC and AB-class buffer

  Ye Xiangyang, Wang Yunfeng, Zhang Haiying, Wang Qingpu

  J. Semicond.  2012, 33(2): 025003
  doi: 10.1088/1674-4926/33/2/025003

  A 0.18 μm CMOS Gilbert low noise mixer with noise cancellation

  Sun Jingye, Huang Lu, Yuan Haiquan, Lin Fujiang

  J. Semicond.  2012, 33(2): 025004
  doi: 10.1088/1674-4926/33/2/025004

  A 65-nm low-noise low-cost ∑Δ modulator for audio applications

  Liang Guo, Liao Lu, Luo Hao, Liu Xiaopeng, Han Xiaoxia, Han Yan

  J. Semicond.  2012, 33(2): 025005
  doi: 10.1088/1674-4926/33/2/025005

  A monolithic RF transceiver for DC-OFDM UWB

  Chen Yunfeng, Li Wei, Fu Haipeng, Gao Ting, Chen Danfeng, Zhou Feng, Cai Deyun, Li Dan, Niu Yangyang, Zhou Hanchao, Zhu Ning, Li Ning, Ren Junyan

  J. Semicond.  2012, 33(2): 025006
  doi: 10.1088/1674-4926/33/2/025006

  Analysis and design of a high-linearity receiver RF front-end with an improved 25%-duty-cycle LO generator for WCDMA/GSM applications

  Hu Song, Li Weinan, Huang Yumei, Hong Zhiliang

  J. Semicond.  2012, 33(2): 025007
  doi: 10.1088/1674-4926/33/2/025007

  A wide-band low phase noise LC-tuned VCO with constant K_VCO/ω_osc for LTE PLL

  Huang Jiwei, Wang Zhigong, Li Kuili, Li Zhengping, Wang Yongping

  J. Semicond.  2012, 33(2): 025008
  doi: 10.1088/1674-4926/33/2/025008

  An output amplitude configurable wideband automatic gain control with high gain step accuracy

  He Xiaofeng, Mo Taishan, Ma Chengyan, Ye Tianchun

  J. Semicond.  2012, 33(2): 025009
  doi: 10.1088/1674-4926/33/2/025009

  SHA-less architecture with enhanced accuracy for pipelined ADC

  Zhao Lei, Yang Yintang, Zhu Zhangming, Liu Lianxi

  J. Semicond.  2012, 33(2): 025010
  doi: 10.1088/1674-4926/33/2/025010

  Digital post-calibration of a 5-bit 1.25 GS/s flash ADC

  Yang Yang, Zhao Xianli, Zhong Shun'an, Li Guofeng

  J. Semicond.  2012, 33(2): 025011
  doi: 10.1088/1674-4926/33/2/025011

  A 14-bit 80 MS/s CMOS ADC with 84.8 dB SFDR and 72 dB SNDR

  Cai Hua, Li Ping, Cen Yuanjun, Zhu Zhiyong

  J. Semicond.  2012, 33(2): 025012
  doi: 10.1088/1674-4926/33/2/025012

  A low-power high-speed driving circuit for spatial light modulators

  Zhu Minghao, Zhu Congyi, Li Wenjiang, Zhang Yaohui

  J. Semicond.  2012, 33(2): 025013
  doi: 10.1088/1674-4926/33/2/025013

  A sub-1 V high-precision CMOS bandgap voltage reference

  Liao Jun, Zhao Yiqiang, Geng Junfeng

  J. Semicond.  2012, 33(2): 025014
  doi: 10.1088/1674-4926/33/2/025014

  Design for manufacturability of a VDSM standard cell library

  Zhou Chong, Chen Lan, Zeng Jianping, Yin Minghui, Zhao Jie

  J. Semicond.  2012, 33(2): 025015
  doi: 10.1088/1674-4926/33/2/025015

• SEMICONDUCTOR TECHNOLOGY

  Highly controllable ICP etching of GaAs based materials for grating fabrication

  Qiu Weibin, Wang Jiaxian

  J. Semicond.  2012, 33(2): 026001
  doi: 10.1088/1674-4926/33/2/026001

• SCIENCE FUND INFORMATION

  To carry out in-depth basic research by taking the leap-forward development opportunities — analysis of the applied projects in 2011 semiconductor discipline of the National Natural Science Foundation of China

  He Jie, Pan Qing

  J. Semicond.  2012, 33(2): 027001
  doi: 10.1088/1674-4926/33/2/027001

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