Archive

Volume 33, Issue 8, Aug 2012

• INVITED REVIEW PAPERS

  Progress in Group III nitride semiconductor electronic devices

  Hao Yue, Zhang Jinfeng, Shen Bo, Liu Xinyu

  J. Semicond.  2012, 33(8): 081001
  doi: 10.1088/1674-4926/33/8/081001

• SEMICONDUCTOR PHYSICS

  Structural, electronic, magnetic and optical properties of neodymium chalcogenides using LSDA+U method

  A Shankar, D P Rai, Sandeep, R K Thapa

  J. Semicond.  2012, 33(8): 082001
  doi: 10.1088/1674-4926/33/8/082001

  Dielectric response and electric properties of organic semiconducting phthalocyanine thin films

  A. M. Saleh, S. M. Hraibat, R. M-L. Kitaneh, M. M. Abu-Samreh, S. M. Musameh

  J. Semicond.  2012, 33(8): 082002
  doi: 10.1088/1674-4926/33/8/082002

• SEMICONDUCTOR MATERIALS

  Using I-V characteristics to investigate selected contacts for SnO₂:F thin films

  Shadia. J. Ikhmayies, Riyad N Ahmad-Bitar

  J. Semicond.  2012, 33(8): 083001
  doi: 10.1088/1674-4926/33/8/083001

  Influence of sputtering pressure on optical constants of a-GaAs_1-xN_x thin films

  Jia Baoshan, Wang Yunhua, Zhou Lu, Bai Duanyuan, Qiao Zhongliang, Gao Xin, Bo Baoxue

  J. Semicond.  2012, 33(8): 083002
  doi: 10.1088/1674-4926/33/8/083002

  Influence of surface preparation on atomic layer deposition of Pt films

  Ge Liang, Hu Cheng, Zhu Zhiwei, Zhang Wei, Wu Dongping, Zhang Shili

  J. Semicond.  2012, 33(8): 083003
  doi: 10.1088/1674-4926/33/8/083003

• SEMICONDUCTOR DEVICES

  Characteristics of a GaN-based Gunn diode for THz signal generation

  R K Parida, N C Agrawala, G N Dash, A K Panda

  J. Semicond.  2012, 33(8): 084001
  doi: 10.1088/1674-4926/33/8/084001

  A novel antifuse structure based on amorphous bismuth zinc niobate thin films

  Wang Gang, Li Wei, Li Ping, Li Zuxiong, Fan Xue, Jiang Jing

  J. Semicond.  2012, 33(8): 084002
  doi: 10.1088/1674-4926/33/8/084002

  ZnO nanowire network transistors based on a self-assembly method

  Dai Zhenqing, Chen Changxin, Zhang Yaozhong, Wei Liangming, Zhang Jing, Xu Dong, Zhang Yafei

  J. Semicond.  2012, 33(8): 084003
  doi: 10.1088/1674-4926/33/8/084003

  A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics

  Cui Ning, Liang Renrong, Wang Jing, Zhou Wei, Xu Jun

  J. Semicond.  2012, 33(8): 084004
  doi: 10.1088/1674-4926/33/8/084004

  A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices

  Huang Haiyun, Wang Dejun, Li Wenbo, Xu Yue, Qin Huibin, Hu Yongcai

  J. Semicond.  2012, 33(8): 084005
  doi: 10.1088/1674-4926/33/8/084005

  A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

  Zhang Junyu, Wang Yong, Liu Jing, Zhang Manhong, Xu Zhongguang, Huo Zongliang, Liu Ming

  J. Semicond.  2012, 33(8): 084006
  doi: 10.1088/1674-4926/33/8/084006

  Double-π fully scalable model for on-chip spiral inductors

  Liu Jun, Zhong Lin, Wang Huang, Wen Jincai, Sun Lingling, Yu Zhiping, Marissa Condon

  J. Semicond.  2012, 33(8): 084007
  doi: 10.1088/1674-4926/33/8/084007

• SEMICONDUCTOR INTEGRATED CIRCUITS

  A high-efficiency, low-noise power solution for a dual-channel GNSS RF receiver

  Shi Jian, Mo Taishan, Le Jianlian, Gan Yebing, Ma Chengyan, Ye Tianchun

  J. Semicond.  2012, 33(8): 085001
  doi: 10.1088/1674-4926/33/8/085001

  An SEU-hardened latch with a triple-interlocked structure

  Li Yuanqing, Yao Suying, Xu Jiangtao, Gao Jing

  J. Semicond.  2012, 33(8): 085002
  doi: 10.1088/1674-4926/33/8/085002

  A 10-Gb/s inductor-less variable gain amplifier with a linear-in-dB characteristic and DC-offset cancellation

  Liu Chang, Yan Yuepeng, Goh Wang-Ling, Xiong Yongzhong, Zhang Lijun, Mohammad Madihian

  J. Semicond.  2012, 33(8): 085003
  doi: 10.1088/1674-4926/33/8/085003

  A CMOS frequency generation module for 60-GHz applications

  Zhou Chunyuan, Zhang Lei, Wang Hongrui, Qian He

  J. Semicond.  2012, 33(8): 085004
  doi: 10.1088/1674-4926/33/8/085004

  Ways to suppress click and pop for class D amplifiers

  Wang Haishi, Zhang Bo, Sun Jiang

  J. Semicond.  2012, 33(8): 085005
  doi: 10.1088/1674-4926/33/8/085005

  A 400-MS/s 12-bit current-steering D/A converter

  Wang Shaopeng, Ren Yannan, Li Fule, Wang Zhihua

  J. Semicond.  2012, 33(8): 085006
  doi: 10.1088/1674-4926/33/8/085006

  Diagnosis of soft faults in analog integrated circuits based on fractional correlation

  Deng Yong, Shi Yibing, Zhang Wei

  J. Semicond.  2012, 33(8): 085007
  doi: 10.1088/1674-4926/33/8/085007

  A simple and effective method to achieve the successful start-up of a current reference

  Han Lei, Wang Yujun, Zhang Xiaoxing, Dai Yujie, Lü Yingjie

  J. Semicond.  2012, 33(8): 085008
  doi: 10.1088/1674-4926/33/8/085008

• SEMICONDUCTOR TECHNOLOGY

  Optimization of a Cu CMP process modeling parameters of nanometer integrated circuits

  Ruan Wenbiao, Chen Lan, Ma Tianyu, Fang Jingjing, Zhang He, Ye Tianchun

  J. Semicond.  2012, 33(8): 086001
  doi: 10.1088/1674-4926/33/8/086001

  High-speed through-silicon via filling method using Cu-cored solder balls

  He Ran, Wang Huijuan, Yu Daquan, Zhou Jing, Dai Fengwei, Song Chongshen, Sun Yu, Wan Lixi

  J. Semicond.  2012, 33(8): 086002
  doi: 10.1088/1674-4926/33/8/086002

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