Archive

Volume 39, Issue 5, May 2018

• SEMICONDUCTOR PHYSICS 

  The oscillations in ESR spectra of Hg_0.76Cd_0.24Te implanted by Ag⁺ at the X and Q-bands

  A. V. Shestakov, I. I. Fazlizhanov, I. V. Yatsyk, I. F. Gilmutdinov, M. I. Ibragimova, V. A. Shustov, R. M. Eremina

  J. Semicond.  2018, 39(5): 052001
  doi: 10.1088/1674-4926/39/5/052001

• SEMICONDUCTOR MATERIALS

  On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data

  E. L. Pankratov

  J. Semicond.  2018, 39(5): 053001
  doi: 10.1088/1674-4926/39/5/053001

  The structure and magnetic properties of β-(Ga_0.96Mn_0.04)₂O₃ thin film

  Yuanqi Huang, Zhengwei Chen, Xiao Zhang, Xiaolong Wang, Yusong Zhi, Zhenping Wu, Weihua Tang

  J. Semicond.  2018, 39(5): 053002
  doi: 10.1088/1674-4926/39/5/053002

  Lateral polarity control of III-nitride thin film and application in GaN Schottky barrier diode

  Junmei Li, Wei Guo, Moheb Sheikhi, Hongwei Li, Baoxue Bo, Jichun Ye

  J. Semicond.  2018, 39(5): 053003
  doi: 10.1088/1674-4926/39/5/053003

  Growth and characteristics of p-type doped GaAs nanowire

  Bang Li, Xin Yan, Xia Zhang, Xiaomin Ren

  J. Semicond.  2018, 39(5): 053004
  doi: 10.1088/1674-4926/39/5/053004

• SEMICONDUCTOR DEVICES

  Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement

  S. Poorvasha, B. Lakshmi

  J. Semicond.  2018, 39(5): 054001
  doi: 10.1088/1674-4926/39/5/054001

  Self-assembled patches in PtSi/n-Si (111) diodes

  I. M. Afandiyeva, Ş. Altιndal, L. K. Abdullayeva, A. İ. Bayramova

  J. Semicond.  2018, 39(5): 054002
  doi: 10.1088/1674-4926/39/5/054002

  An improved large signal model of InP HEMTs

  Tianhao Li, Wenjun Li, Jun Liu

  J. Semicond.  2018, 39(5): 054003
  doi: 10.1088/1674-4926/39/5/054003

  An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

  Kun Ren, Jiachen Zheng, Haiyan Lu, Jun Liu, Lishu Wu, Wenyong Zhou, Wei Cheng

  J. Semicond.  2018, 39(5): 054004
  doi: 10.1088/1674-4926/39/5/054004

  Asymmetric anode and cathode extraction structure fast recovery diode

  Jiaqiang Xie, Li Ma, Yong Gao

  J. Semicond.  2018, 39(5): 054005
  doi: 10.1088/1674-4926/39/5/054005

• SEMICONDUCTOR INTEGRATED CIRCUITS

  Frequency equation for the submicron CMOS ring oscillator using the first order characterization

  Aravinda Koithyar, T. K. Ramesh

  J. Semicond.  2018, 39(5): 055001
  doi: 10.1088/1674-4926/39/5/055001

  Design and implementation of quadrature bandpass sigma–delta modulator used in low-IF RF receiver

  Binjie Ge, Yan Li, Hang Yu, Xiaoxing Feng

  J. Semicond.  2018, 39(5): 055002
  doi: 10.1088/1674-4926/39/5/055002

  An advanced SEU tolerant latch based on error detection

  Hui Xu, Jianwei Zhu, Xiaoping Lu, Jingzhao Li

  J. Semicond.  2018, 39(5): 055003
  doi: 10.1088/1674-4926/39/5/055003

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