Temperature-Dependent 4H-SiC MOSFET Channel-Electron Mobility Model for Circuit Simulation

  • Hebei University of Technology,Tianjin 300130,China
  • Hebei Normal University of Science and Technology,Qinhuangdao 066600,China
  • Hebei University of Technology,Tianjin 300130,China
  • Hebei University of Technology,Tianjin 300130,China
  • The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China

Key words: 4H-SiCn-MOSFETthreshold voltageinterface state parameterstemperature-dependent mobility

Abstract: An improved temperature-dependent 4H-SiC MOSFET channel-electron mobility model for circuit simulation is established.Some factors are introduced,including the effects of temperature on transverse effective electric field and surface roughness scattering,the dependence of the saturation drift velocity of the electron on transverse effective electric field and temperature,and an improved interface trapped charge and fixed oxide charge coulomb scattering model.In addition,the interface state parameters and fixed oxide charge density are extracted by simulation with the experimental temperature-threshold voltage curve.The simulated output characteristic curves with this model agree with experimental results.

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