Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD

  • College of Optical and Electronic Technology,China Jiliang University,Hangzhou 310018,China
  • State Key Laboratory of Transducer Technology,Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
  • State Key Laboratory of Transducer Technology,Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
  • State Key Laboratory of Transducer Technology,Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

Key words: amorphous siliconannealingFTIRtemperature coefficient resistance

Abstract: A hydrogenated amorphous silicon of different phosphor doping concentrations is fabricated by PECVD.FTIR spectra and TCR of a-Si:H are obtained after annealing at different temperatures and times.The structure and bonding of the film are decided by different annealing conditions,leading to the change in the thermal and electric characteristics.Lu’s model is used to explain the phenomena,and an optimum preparation is attained with a doping ratio of 0.025 and an annealing temperature of 600℃.

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