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Back Article

  • [1]

    Hui Zhu, Haiou Li, Qi Li, Yuanhao Huang, Xiaoning Xu, Hailiang Zhao. A novel multiple super junction power device structure with low specific on-resistance. Journal of Semiconductors, 2014, 35(10): 104006-104006-5. doi: 10.1088/1674-4926/35/10/104006

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    Zhu Yangjun, Miao Qinghai, Zhang Xinghua, Yang Lieyong, Lu Shuojin. Real-Time and On-Line Measurement of Junction Temperature for Semiconductor Power Devices. Journal of Semiconductors, 2007, 28(6): 980-983.

  • [3]

    Yong Zhang. Applications of Huang–Rhys theory in semiconductor optical spectroscopy. Journal of Semiconductors, 2019, 40(9): 091102-091102-9. doi: 10.1088/1674-4926/40/9/091102

  • [4]

    Aritra Acharyya, Suranjana Banerjee, J. P. Banerjee. Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device. Journal of Semiconductors, 2013, 34(2): 024001-024001-12. doi: 10.1088/1674-4926/34/2/024001

  • [5]

    Weinan Dai, Jing Zhu, Weifeng Sun, Yicheng Du, Keqin Huang. An improved trench gate super-junction IGBT with double emitter. Journal of Semiconductors, 2015, 36(1): 014009-6. doi: 10.1088/1674-4926/36/1/014009

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    Ye Jun, Fu Daping, Luo Bo, Zhao Yuanyuan, Qiao Ming, Zhang Bo. A novel TFS-IGBT with a super junction floating layer. Journal of Semiconductors, 2010, 31(11): 114008-5. doi: 10.1088/1674-4926/31/11/114008

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    Pu Hongbin, Cao Lin, Chen Zhiming, Ren Jie. Optimized design of 4H-SiC floating junction power Schottky barrier diodes. Journal of Semiconductors, 2009, 30(4): 044001-3. doi: 10.1088/1674-4926/30/4/044001

  • [8]

    Wei Hailong, Liu Youbao, Guo Zhongjie, Liao Xue. A micro-power LDO with piecewise voltage foldback current limit protection. Journal of Semiconductors, 2012, 33(11): 115012-5. doi: 10.1088/1674-4926/33/11/115012

  • [9]

    Sah Chih-Tang, Jie Binbin. The Bipolar Theory of the Field-Effect Transistor:X.The Fundamental Physics and Theory(All Device Structures). Journal of Semiconductors, 2008, 29(4): 613-619.

  • [10]

    Yuan Zuo, Haiou Li, Jianghui Zhai, Ning Tang, Shuxiang Song, Qi Li. Thin silicon layer SOI power device with linearly-distance fixed charge islands. Journal of Semiconductors, 2015, 36(5): 054005-5. doi: 10.1088/1674-4926/36/5/054005

  • [11]

    Sh. G. Askerov, L. K. Abdullayeva, M. G. Hasanov. Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems. Journal of Semiconductors, 2020, 41(10): 102101-102101-4. doi: 10.1088/1674-4926/41/10/102101

  • [12]

    Xiangrong Ma, Wei Shi, Mei Xiang. Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch. Journal of Semiconductors, 2013, 34(7): 074011-074011-5. doi: 10.1088/1674-4926/34/7/074011

  • [13]

    Wang Wenlian, Zhang Bo, Li Zhaoji. Super junction LDMOS with enhanced dielectric layer electric field for high breakdown voltage. Journal of Semiconductors, 2011, 32(2): 024002-5. doi: 10.1088/1674-4926/32/2/024002

  • [14]

    Duan Baoxing, Zhang Bo, Li Zhaoji. New Lateral Super Junction MOSFETs with n+-Floating Layeron High-Resistance Substrate. Journal of Semiconductors, 2007, 28(2): 166-170.

  • [15]

    Wei Wu, Bo Zhang, Jian Fang, Xiaorong Luo, Zhaoji Li. A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer. Journal of Semiconductors, 2014, 35(1): 014009-014009-5. doi: 10.1088/1674-4926/35/1/014009

  • [16]

    Liu Zhan, Gu Xiaofeng, Yu Zongguang, Hu Xiduo, Zang Jiafeng. A New Hydrodynamic Model Method for Semiconductor Device Simulation. Journal of Semiconductors, 2008, 29(8): 1570-1574.

  • [17]

    Zi Wei, Zhou Yuqin, Liu Fengzhen, Zhu Meifang. Growth Mechanism of Microcrystalline Silicon Films by Scaling Theory and Monte Carlo Simulation. Journal of Semiconductors, 2008, 29(8): 1465-1468.

  • [18]

    He Wei, Zhang Zhengxuan. SOI Device Design for SEU Hardening. Journal of Semiconductors, 2006, 27(S1): 291-294.

  • [19]

    Yuxi Hong, Dongsheng Ma, Zuochang Ye. Multivariate rational regression and its application in semiconductor device modeling. Journal of Semiconductors, 2018, 39(9): 094010-094010-7. doi: 10.1088/1674-4926/39/9/094010

  • [20]

    Luo Weijun, Chen Xiaojuan, Liu Guoguo, Liu Xinyu, Wang Xiaoyan, Fang Cebao, Guo Lunchun, Wang Xiaoliang. A Test Circuit with Microstrip Filter for Microwave Power Device. Journal of Semiconductors, 2007, 28(S1): 58-4.