Effect of organic amine alkali and inorganic alkali on benzotriazole removal during post Cu-CMP cleaning

Liu Yang, Baimei Tan, Yuling Liu, Baohong Gao, Yilin Liu, Chunyu Han, Qi Wang, Siyu Tian

doi: 10.1088/1674-4926/39/12/126003

key words: post CMP cleaning, benzotriazole (BTA), organic amine alkali, electrochemical measurement

Non-ionic surfactant on particles removal in post-CMP cleaning

Mingbin Sun, Baohong Gao, Chenwei Wang, Yingxin Miao, Bo Duan, Baimei Tan

doi: 10.1088/1674-4926/36/2/026002

key words: post-CMP cleaning, non-ionic surfactant, particle removal, organic contamination

Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

Jin Zhang, Yuling Liu, Chenqi Yan, Yangang He, Baohong Gao

doi: 10.1088/1674-4926/37/4/046001

key words: chemical mechanical planarization (CMP), high-k metal gate (HKMG), defectivity control, surface morphology

Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning

Liu Yang, Baimei Tan, Yuling Liu, Baohong Gao, Chunyu Han

doi: 10.1088/1674-4926/39/12/126002

key words: CMP cleaning, abrasive particles, process parameter, surface roughness

A novel compound cleaning solution for benzotriazole removal after copper CMP

Zhangbing Gu, Yuling Liu, Baohong Gao, Chenwei Wang, Haiwen Deng

doi: 10.1088/1674-4926/36/10/106001

key words: benzotriazole removal, alkaline chelating agent, surfactant, corrosion inhibitor

A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning

Haiwen Deng, Baimei Tan, Baohong Gao, Chenwei Wang, Zhangbing Gu, Yan Zhang

doi: 10.1088/1674-4926/36/10/106002

key words: colloidal silica abrasives removal, FA/O alkaline cleaner, non-ionic surfactant, surface roughness