Study on Interfacial SiO_2 Layer of Silicon Direct Bonding
He Jin , Wang Xin , Chen Xingbi
Closed Analytical Solution of Breakdown Voltage for Planar Junction and Lateral Curvature Effect
LDMOS开关在不同频率下的热安全工作
Li Meizhi, Chen Xingbi
key words: thermal safety, the maximum temperature, switching frequencies
栅压对LDMOS在瞬态大电流下工作的温度影响
key words: gate voltages, temperature, dissipated power densities
A new level-shifting structure with multiply metal rings by divided RESURF technique
Liu Jizhi, Chen Xingbi
doi: 10.1088/1674-4926/30/4/044005
key words: level-shifting, divided RESURF, multiple metal rings, 高压集成电路
A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure
doi: 10.1088/1674-4926/30/12/125001
key words: quasi-3D, 3D, device simulation, high-voltage level-shifting
A simple expression for impurity distribution after multiple diffusion processes
Hu Hao, Chen Xingbi
doi: 10.1088/1674-4926/31/5/052004
key words: impurity distribution, multiple diffusions, planar junction
A novel high voltage start up circuit for an integrated switched mode power supply
doi: 10.1088/1674-4926/31/9/094012
key words: high voltage start up circuit, floating p-island, field ring
A novel high speed lateral IGBT with a self-driven second gate
doi: 10.1088/1674-4926/33/3/034004
key words: lateral IGBT
Hot-carrier reliability in OPTVLD-LDMOS
Cheng Junji, Chen Xingbi
doi: 10.1088/1674-4926/33/6/064003
key words: hot-carrier effects, OPTVLD LDMOS, surface electric field intensity
