Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer
Shaoming Lin, Shaoying Ke, Yujie Ye, Donglin Huang, Jinyong Wu, Songyan Chen, Cheng Li, Jianyuan Wang, Wei Huang
doi: 10.1088/1674-4926/39/11/113001
key words: carrier transport, amorphous Ge interlayer, bubble-free interface, electrical characteristics
Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection
Jinyong Wu, Donglin Huang, Yujie Ye, Jianyuan Wang, Wei Huang, Cheng Li, Songyan Chen, Shaoying Ke
doi: 10.1088/1674-4926/41/12/122402
key words: flat response, broad response, dark current density, graded-SiGe, Ge0.9Sn0.1
A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity
Shumei Lai, Danfeng Mao, Zhiwei Huang, Yihong Xu, Songyan Chen, Cheng Li, Wei Huang, Dingliang Tang
doi: 10.1088/1674-4926/37/9/093004
key words: surface hydrophilicity, contact angle, plasma, GeOxNy, GeOx
Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes
Xiaohui Yi, Zhiwei Huang, Guangyang Lin, Cheng Li, Songyan Chen, Wei Huang, Jun Li, Jianyuan Wang
doi: 10.1088/1674-4926/38/4/042001
key words: germanium, photodiodes, defects, dark current, simulation
Structural characterization of SiC nanoparticles
Baoxing Sun, Ruobing Xie, Cun Yu, Cheng Li, Hongjie Xu
doi: 10.1088/1674-4926/38/10/103002
key words: SiC nanoparticles, small angle X-ray scattering, XRD, TEM, SAXS
A novel COB structure with integrated multifunction
Zhiguo Xie, Cheng Li, Binhai Yu, Yaohao Wang
doi: 10.1088/1674-4926/34/5/055001
key words: COB, integrated multifunction, high reflectivity, high conductivity, AC driving
The impact of polishing on germanium-on-insulator substrates
Wang Lin, Yujiao Ruan, Songyan Chen, Cheng Li, Hongkai Lai, Wei Huang
doi: 10.1088/1674-4926/34/8/083005
key words: germanium-on-insulator, wafer bonding, mechanical polishing, chemical-mechanical polishing
Research progress of Si-based germanium materials and devices
Buwen Cheng, Cheng Li, Zhi Liu, Chunlai Xue
doi: 10.1088/1674-4926/37/8/081001
key words: Ge, Ge-on-insulator, Si-based, epitaxy, light emitting diode, photodetector, MOSFET
