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  • Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

    Yongshun Wang, Li Rui, Adnan Ghaffar, Zaixing Wang, Chunjuan Liu

    doi: 10.1088/1674-4926/36/2/024013

    key words: Schottky potential barrier diode, breakdown voltage, I—V characteristics, NiPt60 sputtering, junction temperature

  • Physical effect of carrier distribution in the channel of static induction thyristor

    Chunjuan Liu, Zaixing Wang, Yongshun Wang

    doi: 10.1088/1674-4926/35/8/084005

    key words: static induction thyristor, carrier distribution, potential barrier, space charge distribution

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