Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode
Yongshun Wang, Li Rui, Adnan Ghaffar, Zaixing Wang, Chunjuan Liu
doi: 10.1088/1674-4926/36/2/024013
key words: Schottky potential barrier diode, breakdown voltage, I—V characteristics, NiPt60 sputtering, junction temperature
Physical effect of carrier distribution in the channel of static induction thyristor
Chunjuan Liu, Zaixing Wang, Yongshun Wang
doi: 10.1088/1674-4926/35/8/084005
key words: static induction thyristor, carrier distribution, potential barrier, space charge distribution