A revew of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory
Xin Yang, Chen Luo, Xiyue Tian, Fang Liang, Yin Xia, Xinqian Chen, Chaolun Wang, Steve Xin Liang, Xing Wu, Junhao Chu
doi: 10.1088/1674-4926/42/1/013102
key words: memory, transmission electron microscopy, in situ characterization, package, reliability
Substrates and interlayer coupling effects on Mo1−xWxSe2 alloys
Fang Liang, Hejun Xu, Zuoyuan Dong, Yafeng Xie, Chen Luo, Yin Xia, Jian Zhang, Jun Wang, Xing Wu
doi: 10.1088/1674-4926/40/6/062005
key words: Mo1−xWxSe2, substrates, two-dimensional materials, bandgaps, photoluminescence
Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film
Chi Yaqing, Zhong Haiqin, Zhang Xueao, Fang Liang, Chang Shengli
doi: 10.1088/1674-4926/30/12/122001
key words: gold quantum dot array
利用线形液膜的红外热像测定GaAs的湿法化学腐蚀启动时长
Liu Lin, Ye Yutang, 吴云峰 , Wu Yunfeng, 陆佳佳 , Fang Liang
key words: GaAs, etching, infrared radiation, real-time monitoring, liquid droplets
新型低压高效叠层有机白光器件
Wei Fuxiang, Fang Liang, Jiang Xueyin, Zhang Zhilin
key words: organic emitting diode, low voltage, tandem, white EL devices
基于漏区边界曲率分析的射频RESURF LDMOS耐压与导通电阻优化
Chi Yaqing, Hao Yue, Feng Hui, Fang Liang
key words: LDMOS, RESURF, boundary curvature radius of drain region, breakdown voltage, on-resistance
