Resistive switching characteristic of electrolyte-oxide-semiconductor structures

Xiaoyu Chen, Hao Wang, Gongchen Sun, Xiaoyu Ma, Jianguang Gao, Wengang Wu

doi: 10.1088/1674-4926/38/8/084003

key words: electrolyte-oxide-semiconductor structure, resistive switching characteristic, conductive filament, threshold voltage, reverse leakage current