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  • Investigations of Key Technologies for 100V HVCMOS Process

    Song Limei, Li Hua, Du Huan, Xia Yang, Han Zhengsheng, Hai Chaohe

    key words: HVCMOS, DGO, compatibility

  • A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency

    Yang Rong, Li Junfeng, Xu Qiuxia, Hai Chaohe, Han Zhengsheng, Qian He

    key words: structure, process, radio frequency, nMOSFET

  • Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET

    Bi Jinshun, Wu Junfeng, Hai Chaohe

    key words: double-gate structure, dynamic threshold, FDSOI, nMOSFET

  • Off-State Breakdown Characteristics of Body-Tied Partial-Depleted SOI nMOS Devices

    Wu Junfeng , Zhong Xinghua , Li Duoli , Kang Xiaohui , Shao Hongxu , Yang Jianjun , Hai Chaohe , and Han Zhengsheng

    key words: partial-depleted SOI, body-tied, breakdown, silicide, H gate

  • 总剂量辐照加固的PDSOI CMOS 64k静态随机存储器

    Guo Tianlei, Zhao Fazhan, Liu Gang, Li Duoli, Li Jing, Zhao Lixin, Zhou Xiaoyin, Hai Chaohe, Han Zhengsheng

    key words: PDSOI, SRAM, total dose, radiation

  • SOI反偏肖特基势垒动态阈值MOS特性

    Bi Jinshun, Hai Chaohe

    key words: SOI, dynamic threshold, Schottky barrier

  • PDSOI nMOSFETs关态击穿特性

    Bi Jinshun, Hai Chaohe

    key words: PDSOI, breakdown, back channel implantation

  • SOI LDMOSFET的背栅特性

    Bi Jinshun, Song Limei, Hai Chaohe, Han Zhengsheng

    key words: SOI, LDMOSFET, back-gate effect

  • 基于混合遗传算法的SOI MOSFET模型参数提取

    Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng

    key words: SOI, parameter extraction, genetic algorithm, simulated annealing algorithm

  • 提高SOI器件和电路性能的研究

    Hai Chaohe, Han Zhengsheng, Zhou Xiaoyin, Zhao Lixin, Li Duoli, Bi Jinshun

    key words: SOI, floating body effect, channel, radiation hardness

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