First-principle study of puckered arsenene MOSFET
Hengze Qu,
Ziwei Lin,
Ruijuan Guo,
Xiyu Ming,
Wenhan Zhou,
Shiying Guo,
Xiufeng Song,
Shengli Zhang,
Haibo Zeng
doi: 10.1088/1674-4926/41/8/082006
key words:
first principle,
two-dimensional material,
electronic properties,
arsenene,
MOSFET