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  • Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process

    Xian Ji, Weihua Kang, Xiaodong Zhang, Zhili Zhang, Jiahui Zhou, Wenjun Xu, Qi Li, Gongli Xiao, Zhijun Yin, Yong Cai, Baoshun Zhang, Haiou Li

    doi: 10.1088/1674-4926/37/2/024006

    key words: high indium composite channels, 80-nm gate length, GaAs substrate, simple technological process

  • MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application

    Jiahui Zhou, Hudong Chang, Honggang Liu, Guiming Liu, Wenjun Xu, Qi Li, Simin Li, Zhiyi He, Haiou Li

    doi: 10.1088/1674-4926/36/5/054004

    key words: MIM capacitors, Al2O3, thickness

  • The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties

    Zizeng Lin, Mingmin Cao, Shengkai Wang, Qi Li, Gongli Xiao, Xi Gao, Honggang Liu, Haiou Li

    doi: 10.1088/1674-4926/37/2/026002

    key words: N2 plasma, (NH4)2Sx treatment, interface properties, MOS capacitors

  • Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology

    Jiahui Zhou, Hudong Chang, Xufang Zhang, Jingzhi Yang, Guiming Liu, Haiou Li, Honggang Liu

    doi: 10.1088/1674-4926/37/2/024005

    key words: RF switch, InGaAs, MOSFET, III-V CMOS

  • Novel 700 V high-voltage SOI LDMOS structure with folded drift region

    Qi Li, Haiou Li, Jianghui Zhai, Ning Tang

    doi: 10.1088/1674-4926/36/2/024008

    key words: folded drift region, breakdown voltage, interdigital oxide layer, electric field modulation

  • Thin silicon layer SOI power device with linearly-distance fixed charge islands

    Yuan Zuo, Haiou Li, Jianghui Zhai, Ning Tang, Shuxiang Song, Qi Li

    doi: 10.1088/1674-4926/36/5/054005

    key words: linearly-distanced, fixed charge island, breakdown voltage, dynamic holes, on-resistance

  • A novel multiple super junction power device structure with low specific on-resistance

    Hui Zhu, Haiou Li, Qi Li, Yuanhao Huang, Xiaoning Xu, Hailiang Zhao

    doi: 10.1088/1674-4926/35/10/104006

    key words: multiple super junction, 3D-depleted, breakdown voltage, specific on-resistance, electric field shielding effect

  • Controlling spins in silicon quantum dots

    Haiou Li, Xin Zhang, Guoping Guo

    doi: 10.1088/1674-4926/41/7/070402

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