Investigations of Key Technologies for 100V HVCMOS Process

Song Limei, Li Hua, Du Huan, Xia Yang, Han Zhengsheng, Hai Chaohe

key words: HVCMOS, DGO, compatibility

An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs

Li Ruizhen, Han Zhengsheng

key words: fully depleted SOI MOSFETs, surface potential, threshold voltage

A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency

Yang Rong, Li Junfeng, Xu Qiuxia, Hai Chaohe, Han Zhengsheng, Qian He

key words: structure, process, radio frequency, nMOSFET

A new OLED SPICE model for pixel circuit simulation in OLED-on-silicon microdisplay design

Zhao Bohua, Huang Ran, Bu Jianhui, Lü Yinxue, Wang Yiqi, Ma Fei, Xie Guohua, Zhang Zhensong, Du Huan, Luo Jiajun, Han Zhengsheng, Zhao Yi

doi: 10.1088/1674-4926/33/7/075007

key words: OLED-on-silicon

总剂量辐照加固的PDSOI CMOS 64k静态随机存储器

Guo Tianlei, Zhao Fazhan, Liu Gang, Li Duoli, Li Jing, Zhao Lixin, Zhou Xiaoyin, Hai Chaohe, Han Zhengsheng

key words: PDSOI, SRAM, total dose, radiation

具有应变沟道及EOT 1.2nm高性能栅长22nm CMOS器件

Xu Qiuxia, Qian He, Duan Xiaofeng, Liu Haihua, Wang Dahai, Han Zhengsheng, Liu Ming, Chen Baoqin, Li Haiou

key words: strained channel, compressive stress, Ge PAI, EOT, gate length, CMOS

RF PDSOI LDMOS器件的电离总剂量辐照效应

Liu Mengxin, Han Zhengsheng, Bi Jinshun, Fan Xuemei, Liu Gang, Du Huan, Song Limei

key words: PDSOI, LDMOS, RF, total ionizing dose radiation

Simulation of the sensitive region to SEGR in power MOSFETs

Wang Lixin, Lu Jiang, Liu Gang, Wang Chunlin, Teng Rui, Han Zhengsheng, Xia Yang

doi: 10.1088/1674-4926/33/5/054008

key words: single event gate rupture

总剂量辐照加固的PDSOI CMOS 3线-8线译码器

Liu Mengxin, Han Zhengsheng, Li Duoli, Liu Gang, Zhao Chaorong, Zhao Fazhan

key words: PDSOI, decoder, total dose, radiation

隐埋层中二维效应对全耗尽SOI非对称HALO结构阈值电压的影响

Xu Jian, Ding Lei, Han Zhengsheng, Zhong Chuanjie

key words: threshold voltage, two-dimension effects, fully depleted SOI, HALO structure