Dopant atoms as quantum components in silicon nanoscale devices

Xiaosong Zhao, Weihua Han, Hao Wang, Liuhong Ma, Xiaoming Li, Wang Zhang, Wei Yan, Fuhua Yang

doi: 10.1088/1674-4926/39/6/061003

key words: silicon nanoscale devices, dopant atoms, ionization energy, dopant-induced quantum dots, quantum transport

Research and optimization of the ESD response characteristic in a ps-LDMOS transistor

Hao Wang, Siyang Liu, Weifeng Sun, Tingting Huang

doi: 10.1088/1674-4926/35/1/014010

key words: ESD response characteristic, ESD robustness, ps-LDMOS, p-LDD

A CMOS fifth-derivative Gaussian pulse generator for UWB applications

Jin He, Jiang Luo, Hao Wang, Sheng Chang, Qijun Huang, Yueping Zhang

doi: 10.1088/1674-4926/35/9/095005

key words: CMOS, pulse generator, ultra-wideband (UWB), impulse radio (IR)

Resistive switching characteristic of electrolyte-oxide-semiconductor structures

Xiaoyu Chen, Hao Wang, Gongchen Sun, Xiaoyu Ma, Jianguang Gao, Wengang Wu

doi: 10.1088/1674-4926/38/8/084003

key words: electrolyte-oxide-semiconductor structure, resistive switching characteristic, conductive filament, threshold voltage, reverse leakage current