Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond
Rui Zhou,
Cui Yu,
Chuangjie Zhou,
Jianchao Guo,
Zezhao He,
Yanfeng Wang,
Feng Qiu,
Hongxing Wang,
Shujun Cai,
Zhihong Feng
doi: 10.1088/1674-4926/41/12/122801
key words:
diamond,
transistor,
trap,
defect,
power density
