Optimal migration route of Cu in HfO2
Jinlong Lu, Jing Luo, Hongpeng Zhao, Jin Yang, Xianwei Jiang, Qi Liu, Xiaofeng Li, Yuehua Dai
doi: 10.1088/1674-4926/35/1/013001
key words: HfO2, RRAM, Cu migration, lattice orientation, migration speed
A first-principle investigation of the oxygen defects in Si3N4-based charge trapping memories
Jing Luo, Jinlong Lu, Hongpeng Zhao, Yuehua Dai, Qi Liu, Jin Yang, Xianwei Jiang, Huifang Xu
doi: 10.1088/1674-4926/35/1/014004
key words: charge trapping memory, silicon nitride, substitutional oxygen, capturing property, first-principle
An antiferromagnetic two-dimensional material: Chromium diiodides monolayer
Jingjing Zhang, Jin Yang, Liangzhong Lin, JiaJi Zhu
doi: 10.1088/1674-4926/41/12/122502
key words: first-principles calculation, chromium diiodide, two-dimensional materials, two-dimensional antiferromagnet
Physical mechanism of resistance switching in the co-doped RRAM
Jin Yang, Yuehua Dai, Shibin Lu, Xianwei Jiang, Feifei Wang, Junning Chen
doi: 10.1088/1674-4926/38/1/014008
key words: RRAM, resistive switching, co-doped, conductive path, physical mechanism
