Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor

Yongye Liang, Kyungsoo Jang, S. Velumani, Cam Phu Thi Nguyen, Junsin Yi

doi: 10.1088/1674-4926/36/2/024007

key words: a-ITZO TFTs, low resistivity, interface trap density, electrical properties, electrical stability