Off-State Breakdown Characteristics of Body-Tied Partial-Depleted SOI nMOS Devices

Wu Junfeng , Zhong Xinghua , Li Duoli , Kang Xiaohui , Shao Hongxu , Yang Jianjun , Hai Chaohe , and Han Zhengsheng

key words: partial-depleted SOI, body-tied, breakdown, silicide, H gate

总剂量辐照加固的PDSOI CMOS 64k静态随机存储器

Guo Tianlei, Zhao Fazhan, Liu Gang, Li Duoli, Li Jing, Zhao Lixin, Zhou Xiaoyin, Hai Chaohe, Han Zhengsheng

key words: PDSOI, SRAM, total dose, radiation

总剂量辐照加固的PDSOI CMOS 3线-8线译码器

Liu Mengxin, Han Zhengsheng, Li Duoli, Liu Gang, Zhao Chaorong, Zhao Fazhan

key words: PDSOI, decoder, total dose, radiation

Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFET

Mei Bo, Bi Jinshun, Li Duoli, Liu Sinan, Han Zhengsheng

doi: 10.1088/1674-4926/33/2/024002

key words: back-gate

基于混合遗传算法的SOI MOSFET模型参数提取

Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng

key words: SOI, parameter extraction, genetic algorithm, simulated annealing algorithm

提高SOI器件和电路性能的研究

Hai Chaohe, Han Zhengsheng, Zhou Xiaoyin, Zhao Lixin, Li Duoli, Bi Jinshun

key words: SOI, floating body effect, channel, radiation hardness