A Novel High Output Resistance Current Source Based on Negative Resistance
Luo Ping, Li Zhaoji, Yu Lei, Zhang Bo
key words: current source, negative resistance, paralleled resistance
An Analytical Model for the Surface Electrical Field Distribution and Optimization of Bulk-Silicon Double RESURF Devices
Li Qi, Li Zhaoji, Zhang Bo
key words: bulk-silicon, double RESURF, surface electrical field, optimization
On-State Breakdown Model for High Voltage RESURF LDMOS
Fang Jian , Yi Kun , Li Zhaoji , and Zhang Bo（436）
基于薄外延技术的高压BCD兼容工艺
Qiao Ming, Xiao Zhiqiang, Fang Jian, Zheng Xin, Zhou Xianda, Xu Jing, He Zhongbo, Duan Mingwei, Zhang Bo, Li Zhaoji
key words: BCD process, thin epitaxial technology, double RESURF, LDMOS
一种新型半绝缘键合SOI结构
Tan Kaizhou, Feng Jian, Liu Yong, Xu Shiliu, Yang Mohua, Li Zhaoji, Zhang Zhengfan, Liu Yukui, He Kaiquan
key words: wafer bonding, semi-insulation SOI, interim polysilicon layer
Ultra-low specific on-resistance SOI double-gate trench-type MOSFET
Lei Tianfei, Luo Xiaorong, Ge Rui, Chen Xi, Wang Yuangang, Yao Guoliang, Jiang Yongheng, Zhang Bo, Li Zhaoji
doi: 10.1088/1674-4926/32/10/104004
key words: double gates
Novel SOI double-gate MOSFET with a P-type buried layer
Yao Guoliang, Luo Xiaorong, Wang Qi, Jiang Yongheng, Wang Pei, Zhou Kun, Wu Lijuan, Zhang Bo, Li Zhaoji
doi: 10.1088/1674-4926/33/5/054006
key words: SOI
A low on-resistance SOI LDMOS using a trench gate and a recessed drain
Ge Rui, Luo Xiaorong, Jiang Yongheng, Zhou Kun, Wang Pei, Wang Qi, Wang Yuangang, Zhang Bo, Li Zhaoji
doi: 10.1088/1674-4926/33/7/074005
key words: trench gate
High voltage SOI LDMOS with a compound buried layer
Luo Xiaorong, Hu Gangyi, Zhou Kun, Jiang Yongheng, Wang Pei, Wang Qi, Luo Yinchun, Zhang Bo, Li Zhaoji
doi: 10.1088/1674-4926/33/10/104003
key words: SOI, electric field, specific on-resistance, breakdown voltage
一种半绝缘键合SOI新型BCD结构
Tan Kaizhou, Yang Mohua, Xu Shiliu, Liu Yukui, Li Zhaoji, Liu Yong, Feng Jian
key words: BCD, semi-insulation SOI, VDMOS, power integrated circuit
