键合方法研制InAsP/InGaAsP量子阱1.3μm垂直腔面发射激光器

Lao Yanfeng, Cao Chunfang, Wu Huizhen, Cao Meng, Liu Cheng, Xie Zhengsheng, Gong Qian

key words: vertical-cavity surface-emitting laser, wafer-direct bonding, tunnel junction

ICP刻蚀对InAsP/InP应变多量子阱的损伤

Cao Meng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao, Liu Cheng, Zhang Jun, Jiang Shan

key words: dry etching, strained multiple quantum wells, PL spectra, damage

离子注入方法形成电流限制孔径及其对器件光电特性的影响

Liu Cheng, Cao Chunfang, Lao Yanfeng, Cao Meng, Wu Huizhen

key words: EL device structure, electrical confined aperture, ion implantation

InAsP/InGaAsP/InP应变材料的二维倒空间衍射研究

Huang Zhanchao, Wu Huizhen, Lao Yanfeng, Liu Cheng, Cao Meng

key words: X-ray diffraction, reciprocal space mapping, strain, quantum wells

直接键合微腔结构的光谱特性

Lao Yanfeng, Wu Huizhen, Huang Zhanchao, Liu Cheng, Cao Meng

key words: direct wafer bonding, interface defect, reflectivity spectrum

掩埋隧道结在长波长VCSEL结构中的应用

Liu Cheng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao, Cao Meng

key words: tunnel junction, VCSEL, optoelectronic properties