ZnO纳米棒的低温生长及光致发光性能

Lang Jihui, Yang Jinghai, Li Changsheng, Han Qiang, Yang Lili, Wang Dandan, Gao Ming, Liu Xiaoyan

key words: ZnO nanorod, molar concentration of zinc nitrate, reaction time, photoluminescence

双栅肖特基源漏MOSFET的阈值电压模型

Xu Bojuan, Du Gang, Xia Zhiliang, Zeng Lang, Han Ruqi, Liu Xiaoyan

key words: double-gate, Schottky barrier, threshold voltage

Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

Wei Kangliang, Liu Xiaoyan, Du Gang, Han Ruqi

doi: 10.1088/1674-4926/31/8/084004

key words: heterostructure, Monte Carlo simulation, carrier transport

Effect of trapped charge accumulation on the retention of charge trapping memory

Jin Rui, Liu Xiaoyan, Du Gang, Kang Jinfeng, Han Ruqi

doi: 10.1088/1674-4926/31/12/124016

key words: charge accumulation

A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers

Gao Baohong, Zhu Yadong, Liu Yuling, Wang Shengli, Zhou Qiang, Liu Xiaoyan

doi: 10.1088/1674-4926/31/7/076002

key words: non-ionic surfactant

A physical-based pMOSFETs threshold voltage model including the STI stress effect

Wu Wei, Du Gang, Liu Xiaoyan, Sun Lei, Kang Jinfeng, Han Ruqi

doi: 10.1088/1674-4926/32/5/054005

key words: STI stress

Effect of alkaline slurry on the electric character of the pattern Cu wafer

Hu Yi, Liu Yuling, Liu Xiaoyan, He Yangang, Wang Liran, Zhang Baoguo

doi: 10.1088/1674-4926/32/7/076002

key words: resistance

Effect of copper slurry on polishing characteristics

Hu Yi, Liu Yuling, Liu Xiaoyan, Wang Liran, He Yangang

doi: 10.1088/1674-4926/32/11/116001

key words: copper slurry, chemical mechanical planarization, WIWNU

纳米级 MOSFET 的模拟

Liu Xiaoyan, Liu Enfeng, Du Gang, Liu Yibo, Xia Zhiliang, Han Ruqi

key words: nano-scale, semiconductor device simulation, hydrodynamic model, quantum effect

亚 50nm 双栅 MOS 场效应晶体管的 流体动力学模拟

Liu Yibo, Liu Enfeng, Liu Xiaoyan, Han Rugi

key words: hydrodynamic, double gate MOSFET, threshold vo1tage, short channel effect, electron temperature, velocity