Novel 700 V high-voltage SOI LDMOS structure with folded drift region

Qi Li, Haiou Li, Jianghui Zhai, Ning Tang

doi: 10.1088/1674-4926/36/2/024008

key words: folded drift region, breakdown voltage, interdigital oxide layer, electric field modulation

Thin silicon layer SOI power device with linearly-distance fixed charge islands

Yuan Zuo, Haiou Li, Jianghui Zhai, Ning Tang, Shuxiang Song, Qi Li

doi: 10.1088/1674-4926/36/5/054005

key words: linearly-distanced, fixed charge island, breakdown voltage, dynamic holes, on-resistance

A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer

Qiuming Zhao, Qi Li, Ning Tang, Yongchang Li

doi: 10.1088/1674-4926/34/3/034003

key words: trenched buried oxide layer, breakdown voltage, on-resistance, compensation layer