3-D simulation of angled strike heavy-ion induced charge collection in silicon-germanium heterojunction bipolar transistors

Jinxin Zhang, Hongxia Guo, Lin Wen, Qi Guo, Jiangwei Cui, Xin Wang, Wei Deng, Qiwen Zhen, Xue Fan, Yao Xiao

doi: 10.1088/1674-4926/35/4/044003

key words: SiGe heterojunction bipolar transistors, single-event effects, angled strike, three-dimensional numerical simulation

Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters

Xin Wang, Wu Lu, Qi Guo, Xue Wu, Shanbin Xi, Wei Deng, Jiangwei Cui, Jinxin Zhang

doi: 10.1088/1674-4926/34/12/124006

key words: digital-to-analog, CBCMOS, dose rate effect, ionizing radiation

Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress

Qiwen Zheng, Xuefeng Yu, Jiangwei Cui, Qi Guo, Zhongchao Cong, Xingyao Zhang, Wei Deng, Xiaofu Zhang, Zhengxin Wu

doi: 10.1088/1674-4926/34/7/074008

key words: silicon-on-insulator, hot-carrier effect, hump, back gate

The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters

Xue Wu, Wu Lu, Yudong Li, Qi Guo, Xin Wang, Xingyao Zhang, Xin Yu, Wuying Ma

doi: 10.1088/1674-4926/35/4/044008

key words: ionizing radiation, analog-to-digital converter, different biases, dose-rate effects

Hot-carrier effects on irradiated deep submicron NMOSFET

Jiangwei Cui, Qiwen Zheng, Xuefeng Yu, Zhongchao Cong, Hang Zhou, Qi Guo, Lin Wen, Ying Wei, Diyuan Ren

doi: 10.1088/1674-4926/35/7/074004

key words: γ ray irradiation, deep submicron, hot-carrier effect

Proton radiation effect of NPN-input operational amplifier under different bias conditions

Ke Jiang, Wu Lu, Qi Guo, Chengfa He, Xin Wang, Muohan Liu, Xiaolong Li

doi: 10.1088/1674-4926/36/12/125001

key words: NPN input bipolar operational amplifier, proton radiation, different biases, radiation effect

The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET

Baoshun Wang, Jiangwei Cui, Qi Guo, Qiwen Zheng, Ying Wei, Shanxue Xi

doi: 10.1088/1674-4926/41/12/122102

key words: FinFET, TID, HCI

Total dose responses and reliability issues of 65 nm NMOSFETs

Dezhao Yu, Qiwen Zheng, Jiangwei Cui, Hang Zhou, Xuefeng Yu, Qi Guo

doi: 10.1088/1674-4926/37/6/064016

key words: total dose responses, reliability, lifetime