Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer

Shaoming Lin, Shaoying Ke, Yujie Ye, Donglin Huang, Jinyong Wu, Songyan Chen, Cheng Li, Jianyuan Wang, Wei Huang

doi: 10.1088/1674-4926/39/11/113001

key words: carrier transport, amorphous Ge interlayer, bubble-free interface, electrical characteristics

Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection

Jinyong Wu, Donglin Huang, Yujie Ye, Jianyuan Wang, Wei Huang, Cheng Li, Songyan Chen, Shaoying Ke

doi: 10.1088/1674-4926/41/12/122402

key words: flat response, broad response, dark current density, graded-SiGe, Ge_0.9Sn_0.1

A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity

Shumei Lai, Danfeng Mao, Zhiwei Huang, Yihong Xu, Songyan Chen, Cheng Li, Wei Huang, Dingliang Tang

doi: 10.1088/1674-4926/37/9/093004

key words: surface hydrophilicity, contact angle, plasma, GeO_xN_y, GeO_x

Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes

Xiaohui Yi, Zhiwei Huang, Guangyang Lin, Cheng Li, Songyan Chen, Wei Huang, Jun Li, Jianyuan Wang

doi: 10.1088/1674-4926/38/4/042001

key words: germanium, photodiodes, defects, dark current, simulation

The impact of polishing on germanium-on-insulator substrates

Wang Lin, Yujiao Ruan, Songyan Chen, Cheng Li, Hongkai Lai, Wei Huang

doi: 10.1088/1674-4926/34/8/083005

key words: germanium-on-insulator, wafer bonding, mechanical polishing, chemical-mechanical polishing