An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate
Kun Ren, Jiachen Zheng, Haiyan Lu, Jun Liu, Lishu Wu, Wenyong Zhou, Wei Cheng
doi: 10.1088/1674-4926/39/5/054004
key words: CMOS technology, amplifier, integrated circuits
A 220 GHz dynamic frequency divider in 0.5 μm InP DHBT technology
Wei Cheng, Youtao Zhang, Yuan Wang, Bin Niu, Haiyan Lu, Long Chang, Junling Xie
doi: 10.1088/1674-4926/38/5/054008
key words: InP, heterojunction bipolar transistor, dynamic frequency divider
Frequency stability of InP HBT over 0.2 to 220 GHz
Zhijiang Zhou, Kun Ren, Jun Liu, Wei Cheng, Haiyan Lu, Lingling Sun
doi: 10.1088/1674-4926/36/2/024006
key words: double heterojunction bipolar transistor (DHBT), small-signal model, stability factor
A THz InGaAs/InP double heterojunction bipolar transistor with fmax=325 GHz and BVCBO=10.6 V
Wei Cheng, Yuan Wang, Yan Zhao, Haiyan Lu, Hanchao Gao, Naibin Yang
doi: 10.1088/1674-4926/34/5/054006
key words: InP, DHBT, THz, high breakdown
A 83 GHz InP DHBT static frequency divider
Youtao Zhang, Xiaopeng Li, Min Zhang, Wei Cheng, Xinyu Chen
doi: 10.1088/1674-4926/35/4/045004
key words: high-speed, static frequency divider, InP DHBT
