Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer

Shaoming Lin, Shaoying Ke, Yujie Ye, Donglin Huang, Jinyong Wu, Songyan Chen, Cheng Li, Jianyuan Wang, Wei Huang

doi: 10.1088/1674-4926/39/11/113001

key words: carrier transport, amorphous Ge interlayer, bubble-free interface, electrical characteristics

Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection

Jinyong Wu, Donglin Huang, Yujie Ye, Jianyuan Wang, Wei Huang, Cheng Li, Songyan Chen, Shaoying Ke

doi: 10.1088/1674-4926/41/12/122402

key words: flat response, broad response, dark current density, graded-SiGe, Ge_0.9Sn_0.1

A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity

Shumei Lai, Danfeng Mao, Zhiwei Huang, Yihong Xu, Songyan Chen, Cheng Li, Wei Huang, Dingliang Tang

doi: 10.1088/1674-4926/37/9/093004

key words: surface hydrophilicity, contact angle, plasma, GeO_xN_y, GeO_x

Simulation of the effects of defects in low temperature Ge buffer layer on dark current of Si-based Ge photodiodes

Xiaohui Yi, Zhiwei Huang, Guangyang Lin, Cheng Li, Songyan Chen, Wei Huang, Jun Li, Jianyuan Wang

doi: 10.1088/1674-4926/38/4/042001

key words: germanium, photodiodes, defects, dark current, simulation

New method for thickness determination and microscopic imaging of graphene-like two-dimensional materials

Xudong Qin, Yonghai Chen, Yu Liu, Laipan Zhu, Yuan Li, Qing Wu, Wei Huang

doi: 10.1088/1674-4926/37/1/013002

key words: graphene, two-dimensional materials, microscopic reflectance difference spectroscopy, microscopic morphology, Raman spectra, surface topography

Preparation of erbium ion-doped TiO₂ films and the study of their photocatalytic activity under simulated solar light

Hongfei Lin, Yujiao Huang, Shaoni Li, Chunhui Luan, Wei Huang, Xiaodong Wang, Xianshe Feng

doi: 10.1088/1674-4926/38/11/113004

key words: erbium ion-doped, titania, films, photocatalysis

Utilization of triplet excited states in organic semiconductors

Song Guo, Shujuan Liu, Kenneth Yin Zhang, Wei Huang, Qiang Zhao

doi: 10.1088/1674-4926/40/7/070402

Ambipolar organic heterojunction transistors based on F₁₆CuPc/CuPc with a MoO₃ buffer layer

Mingdong Yi, Ning Zhang, Linghai Xie, Wei Huang

doi: 10.1088/1674-4926/36/10/104001

key words: organic field-effect transistors, heterojunction, ambipolar, contact resistance

Inkjet printed large-area flexible circuits: a simple methodology for optimizing the printing quality

Tao Cheng, Youwei Wu, Xiaoqin Shen, Wenyong Lai, Wei Huang

doi: 10.1088/1674-4926/39/1/015001

key words: inkjet printing, flexible circuits, patterning resolution, large-area electronics, flexible electronics

Recent progress of flexible and wearable strain sensors for human-motion monitoring

Gang Ge, Wei Huang, Jinjun Shao, Xiaochen Dong

doi: 10.1088/1674-4926/39/1/011012

key words: wearable devices, flexible sensors, human-activity detection