Voltage reduction of 808 nm GaAsP/(Al)GaInP laser diodes with GaInAsP intermediate layer

Zhen Zhu, Xin Zhang, Peixu Li, Gang Wang, Xiangang Xu

doi: 10.1088/1674-4926/36/1/014011

key words: MOCVD, GaInAsP layer, heterojunction, voltage reduction

Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector

Zhiyuan Zuo, Wei Xia, Gang Wang, Xiangang Xu

doi: 10.1088/1674-4926/36/2/024011

key words: pyramidally patterned reflector, light emitting diodes, wafer-bonding, light extraction efficiency