Dopant atoms as quantum components in silicon nanoscale devices

Xiaosong Zhao, Weihua Han, Hao Wang, Liuhong Ma, Xiaoming Li, Wang Zhang, Wei Yan, Fuhua Yang

doi: 10.1088/1674-4926/39/6/061003

key words: silicon nanoscale devices, dopant atoms, ionization energy, dopant-induced quantum dots, quantum transport

Prediction and observation of defect-induced room-temperature ferromagnetism in halide perovskites

Zhiguo Sun, Bo Cai, Xi Chen, Wenxian Wei, Xiaoming Li, Dandan Yang, Cuifang Meng, Ye Wu, Haibo Zeng

doi: 10.1088/1674-4926/41/12/122501

key words: lead halide perovskites, magnetic nanocrystals, halogen vacancy defects, DFT calculations, magnetic polarons