Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

Weikang Wu, Xia An, Fei Tan, Hui Feng, Yehua Chen, Jingjing Liu, Xing Zhang, Ru Huang

doi: 10.1088/1674-4926/36/11/114004

key words: heavy ion, displacement damages, PDSOI, performance degradation

Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices

Yehua Chen, Xia An, Weikang Wu, Yao Zhang, Jingjing Liu, Xing Zhang, Ru Huang

doi: 10.1088/1674-4926/36/11/114002

key words: heavy ion, displacement damage, bulk silicon

Line-edge roughness induced single event transient variation in SOI FinFETs

Weikang Wu, Xia An, Xiaobo Jiang, Yehua Chen, Jingjing Liu, Xing Zhang, Ru Huang

doi: 10.1088/1674-4926/36/11/114001

key words: heavy ion irradiation, single event transient, variation, line-edge roughness, SOI, FinFET

Few-mode vertical-cavity surface-emitting lasers for space-division multiplexing

Yaman Su, Lijuan Yu, Xia Guo, Xing Zhang, Jianguo Liu, Ninghua Zhu

doi: 10.1088/1674-4926/38/9/094002

key words: few-mode, VCSELs, oxide aperture, space-division multiplexing

Resistive random access memory and its applications in storage and nonvolatile logic

Dongbin Zhu, Yi Li, Wensheng Shen, Zheng Zhou, Lifeng Liu, Xing Zhang

doi: 10.1088/1674-4926/38/7/071002

key words: RRAM, memory, nonvolatile logic, metal-oxide, resistive switching

Influence of gate-source/drain misalignment on the performance of bulk FinFETs by a 3D full band Monte Carlo simulation

Juncheng Wang, Gang Du, Kangliang Wei, Lang Zeng, Xing Zhang, Xiaoyan Liu

doi: 10.1088/1674-4926/34/4/044005

key words: bulk FinFET, gate-source/drain misalignment, 3D Monte Carlo simulation, carrier transport