Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks
Hao Xu, Hong Yang, Yanrong Wang, Wenwu Wang, Guangxing Wan, Shangqing Ren, Weichun Luo, Luwei Qi, Chao Zhao, Dapeng Chen, Xinyu Liu, Tianchun Ye
doi: 10.1088/1674-4926/37/5/054005
key words: high-k/metal gate stacks, ultra-thin EOT, TZDB, series resistance effect
Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurements
Yiyu Wang, Zhaoyang Peng, Huajun Shen, Chengzhan Li, Jia Wu, Yachao Tang, Yanli Zhao, Ximing Chen, Kean Liu, Xinyu Liu
doi: 10.1088/1674-4926/37/2/026001
key words: SiO2/SiC interface, NO annealing, forming gas annealing, density of interface states
Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer
Jiangmei Feng, Huajun Shen, Xiaohua Ma, Yun Bai, Jia Wu, Chengzhan Li, Kean Liu, Xinyu Liu
doi: 10.1088/1674-4926/37/4/044009
key words: 4H-SiC, carbon-implanted drift layer, PiN diodes, Z1/2 defects
A W-band two-stage cascode amplifier with gain of 25.7 dB
Yinghui Zhong, Yuming Zhang, Yimen Zhang, Yuxiong Cao, Hongfei Yao, Xiantai Wang, Hongliang Lü, Xinyu Liu, Zhi Jin
doi: 10.1088/1674-4926/34/12/125003
key words: cascode, coplanar waveguide, HEMT, gate-length
Improved adhesion and interface ohmic contact on n-type 4H-SiC substrate by using Ni/Ti/Ni
Linchao Han, Huajun Shen, Kean Liu, Yiyu Wang, Yidan Tang, Yun Bai, Hengyu Xu, Yudong Wu, Xinyu Liu
doi: 10.1088/1674-4926/35/7/072003
key words: ohmic contact, SiC, Ni/Ti/Ni, Ni2Si
Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications
Pongthavornkamol Tiwat, Lei Pang, Xinhua Wang, Sen Huang, Guoguo Liu, Tingting Yuan, Xinyu Liu
doi: 10.1088/1674-4926/36/7/074006
key words: AlGaN/GaN HEMT, pulsed I-V, trapping effect, self-heating effect
A full W-band low noise amplifier module for millimeter-wave applications
Hua Zhao, Hongfei Yao, Peng Ding, Yongbo Su, Xiaoxi Ning, Zhi Jin, Xinyu Liu
doi: 10.1088/1674-4926/36/9/095001
key words: W-band, low noise amplifier (LNA), waveguide-to-microstrip probe transition, noise figure, LNA module
A 4 GHz 32 bit direct digital frequency synthesizer based on a novel architecture
Jin Wu, Jianwu Chen, Danyu Wu, Lei Zhou, Fan Jiang, Zhi Jin, Xinyu Liu
doi: 10.1088/1674-4926/34/11/115007
key words: direct digital frequency synthesis, read-only memory, digital-to-analog converter, gallium arsenide, heterojunction bipolar transistor
On-wafer de-embedding techniques from 0.1 to 110 GHz
Guoping Tang, Hongfei Yao, Xiaohua Ma, Zhi Jin, Xinyu Liu
doi: 10.1088/1674-4926/36/5/054012
key words: model, millimeter-wave, de-embed, TRL, LRM
Interlayer exchange coupling in (Ga,Mn)As ferromagnetic semiconductor multilayer systems
Sanghoon Lee, Sunjae Chung, Hakjoon Lee, Xinyu Liu, M. Dobrowolska, J. K. Furdyna
doi: 10.1088/1674-4926/40/8/081503
key words: thin film, crystal, ferromagnetic semiconductor, interlayer coupling
