The stability of a novel weakly alkaline slurry of copper interconnection CMP for GLSI
Caihong Yao, Chenwei Wang, Xinhuan Niu, Yan Wang, Shengjun Tian, Zichao Jiang, Yuling Liu
doi: 10.1088/1674-4926/39/2/026002
key words: stability, weakly alkaline slurry, CMP, copper interconnection
Recent advancements in flexible humidity sensors
Yan Wang, Jia Huang
doi: 10.1088/1674-4926/41/4/040401
A Verilog-A large signal model for InP DHBT including thermal effects
Yuxia Shi, Zhi Jin, Zhijian Pan, Yongbo Su, Yuxiong Cao, Yan Wang
doi: 10.1088/1674-4926/34/6/064007
key words: large signal model, InP DHBT, temperature effect, bandgap narrowing, Verilog-A
A 3.01-3.82 GHz CMOS LC voltage-controlled oscillator with 6.29% VCO-gain variation for WLAN applications
Xiaolong Liu, Lei Zhang, Li Zhang, Yan Wang, Zhiping Yu
doi: 10.1088/1674-4926/35/7/075002
key words: LC VCO, VCO gain (KVCO), low KVCO variation, tuning range, phase noise, CMOS
Modeling and parameter extraction of CMOS on-chip coplanar waveguides up to 67 GHz for mm-wave applications
Jun Luo, Lei Zhang, Yan Wang
doi: 10.1088/1674-4926/34/12/125008
key words: CPWs, unified model, direct extraction, mm-wave, 67 GHz, CMOS
60-GHz array antenna with standard CMOS technology on Schott Borofloat
Jun Luo, Yan Wang, Ruifeng Yue
doi: 10.1088/1674-4926/34/11/115006
key words: Schott Borofloat, array, half-wave dipole, 60 GHz, CMOS technology
High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells
Yang Tang, Zuochang Ye, Yan Wang
doi: 10.1088/1674-4926/35/3/034012
key words: CMOS MOSFETs, layout, millimeter-wave, scalable model
Efficient SRAM yield optimization with mixture surrogate modeling
Zhongjian Jiang, Zuochang Ye, Yan Wang
doi: 10.1088/1674-4926/37/12/125001
key words: yield optimization, process variations, design variations, mixture surrogate model, statistical analysis, importance sampling
Photoresponsive field-effect transistors based on multilayer SnS2 nanosheets
Yan Wang, Le Huang, Zhongming Wei
doi: 10.1088/1674-4926/38/3/034001
key words: two-dimensional materials, TMDs, SnS2
Statistically modeling I-V characteristics of CNT-FET with LASSO
Dongsheng Ma, Zuochang Ye, Yan Wang
doi: 10.1088/1674-4926/38/8/084002
key words: statistical learning, compact model, CNT-FET, I-V characteristics, LASSO, machine learning
