Analytical Model for the Piecewise Linearly Graded Doping Drift Region in LDMOS

Sun Weifeng, Yi Yangbo, Lu Shengli, Shi Longxing

key words: breakdown voltage, specific on-resistance, piecewise linearly graded doping drift region

高压pLEDMOS器件在不同应力条件下导通电阻的衰退及改进方法

Sun Weifeng, Wu Hong, Shi Longxing, Yi Yangbo, Li Haisong

key words: pLEDMOS, on-resistance degradation, hot electron injection and trapping, thick gate oxide

Layout and process hot carrier optimization of HV-nLEDMOS transistor

Qian Qinsong, Li Haisong, Sun Weifeng, Yi Yangbo

doi: 10.1088/1674-4926/30/3/034004

key words: nLEDMOS

PDP驱动芯片中高压LDMOS建模

Li Haisong, Sun Weifeng, Yi Yangbo, Shi Longxing

key words: model, LDMOS, sub-circuit, PDP driver ICs

Thermal characteristics investigation of high voltage grounded gate-LDMOS under ESD stress conditions

Sun Weifeng, Qian Qinsong, Wang Wen, Yi Yangbo

doi: 10.1088/1674-4926/30/10/104004

key words: thermal characteristic