Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer

Zejie Du, Ruifei Duan, Tongbo Wei, Shuo Zhang, Junxi Wang, Xiaoyan Yi, Yiping Zeng, Junxue Ran, Jinmin Li, Boyu Dong

doi: 10.1088/1674-4926/38/11/113003

key words: metalorganic vapor phase epitaxy, aluminum nitride, deep UV-LED

Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions

Wen Gu, Zhibin Liu, Yanan Guo, Xiaodong Wang, Xiaolong Jia, Xingfang Liu, Yiping Zeng, Junxi Wang, Jinmin Li, Jianchang Yan

doi: 10.1088/1674-4926/41/12/122802

key words: sputter, annealing, AlN, dislocation density

Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

Guoguo Yan, Feng Zhang, Yingxi Niu, Fei Yang, Lei Wang, Wanshun Zhao, Guosheng Sun, Yiping Zeng

doi: 10.1088/1674-4926/37/6/063001

key words: 4H-SiC epilayer, chemical vapor deposition, homoepitaxial growth, growth rate

Detection of lead ions with AlGaAs/InGaAs pseudomorphic high electron mobility transistor

Jiqiang Niu, Yang Zhang, Min Guan, Chengyan Wang, Lijie Cui, Qiumin Yang, Yiyang Li, Yiping Zeng

doi: 10.1088/1674-4926/37/11/114003

key words: Environmental monitoring, AlGaAs/InGaAs, pHEMT, biosensor

The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors

Jiaming Luo, Min Guan, Yang Zhang, Liqiang Chen, Yiping Zeng

doi: 10.1088/1674-4926/39/12/124007

key words: GaAs HEMT, biosensor, electrical properties

Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography

Linghui Zhao, Tongbo Wei, Junxi Wang, Qingfeng Yan, Yiping Zeng, Jinmin Li

doi: 10.1088/1674-4926/34/10/104005

key words: LED, light extraction, photonic crystal, nanospherical-lens photolithography

Structural and magnetic properties of Yb-implanted GaN

Chunhai Yin, Chao Liu, Dongyan Tao, Yiping Zeng

doi: 10.1088/1674-4926/34/5/053002

key words: diluted magnetic semiconductors (DMS), room temperature ferromagnetism, ion implantation, magnetic anisotropy