W-band push-push monolithic frequency doubler in 1-μm InP DHBT technology

Hongfei Yao, Xiantai Wang, Danyu Wu, Yongbo Su, Yuxiong Cao, Ji Ge, Xiaoxi Ning, Zhi Jin

doi: 10.1088/1674-4926/34/9/095006

key words: frequency doubler, W-band, InP, DHBT, push-push

A full W-band low noise amplifier module for millimeter-wave applications

Hua Zhao, Hongfei Yao, Peng Ding, Yongbo Su, Xiaoxi Ning, Zhi Jin, Xinyu Liu

doi: 10.1088/1674-4926/36/9/095001

key words: W-band, low noise amplifier (LNA), waveguide-to-microstrip probe transition, noise figure, LNA module

f_T=260 GHz and f_max=607 GHz of 100-nm-gate In_0.52Al_0.48As/In_0.7Ga_0.3As HEMTs with G_m.max=1441 mS/mm

Qing Wang, Peng Ding, Yongbo Su, Wuchang Ding, Muhammad Asif, Wu Tang, Zhi Jin

doi: 10.1088/1674-4926/37/7/074003

key words: high electron mobility transistor, InGaAs layer, semi-empirical model

A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology

Xi Wang, Bichan Zhang, Hua Zhao, Yongbo Su, Asif Muhammad, Dong Guo, Zhi Jin

doi: 10.1088/1674-4926/38/8/085001

key words: InP, hetero-junction bipolar transistors, dynamic frequency divider

A Verilog-A large signal model for InP DHBT including thermal effects

Yuxia Shi, Zhi Jin, Zhijian Pan, Yongbo Su, Yuxiong Cao, Yan Wang

doi: 10.1088/1674-4926/34/6/064007

key words: large signal model, InP DHBT, temperature effect, bandgap narrowing, Verilog-A

A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain

Hongfei Yao, Yuxiong Cao, Danyu Wu, Xiaoxi Ning, Yongbo Su, Zhi Jin

doi: 10.1088/1674-4926/34/7/075005

key words: power amplifier, W-band, DHBT, InP