A W-band two-stage cascode amplifier with gain of 25.7 dB
Yinghui Zhong, Yuming Zhang, Yimen Zhang, Yuxiong Cao, Hongfei Yao, Xiantai Wang, Hongliang Lü, Xinyu Liu, Zhi Jin
doi: 10.1088/1674-4926/34/12/125003
key words: cascode, coplanar waveguide, HEMT, gate-length
W-band push-push monolithic frequency doubler in 1-μm InP DHBT technology
Hongfei Yao, Xiantai Wang, Danyu Wu, Yongbo Su, Yuxiong Cao, Ji Ge, Xiaoxi Ning, Zhi Jin
doi: 10.1088/1674-4926/34/9/095006
key words: frequency doubler, W-band, InP, DHBT, push-push
A full W-band low noise amplifier module for millimeter-wave applications
Hua Zhao, Hongfei Yao, Peng Ding, Yongbo Su, Xiaoxi Ning, Zhi Jin, Xinyu Liu
doi: 10.1088/1674-4926/36/9/095001
key words: W-band, low noise amplifier (LNA), waveguide-to-microstrip probe transition, noise figure, LNA module
fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm
Qing Wang, Peng Ding, Yongbo Su, Wuchang Ding, Muhammad Asif, Wu Tang, Zhi Jin
doi: 10.1088/1674-4926/37/7/074003
key words: high electron mobility transistor, InGaAs layer, semi-empirical model
A 4 GHz 32 bit direct digital frequency synthesizer based on a novel architecture
Jin Wu, Jianwu Chen, Danyu Wu, Lei Zhou, Fan Jiang, Zhi Jin, Xinyu Liu
doi: 10.1088/1674-4926/34/11/115007
key words: direct digital frequency synthesis, read-only memory, digital-to-analog converter, gallium arsenide, heterojunction bipolar transistor
A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology
Xi Wang, Bichan Zhang, Hua Zhao, Yongbo Su, Asif Muhammad, Dong Guo, Zhi Jin
doi: 10.1088/1674-4926/38/8/085001
key words: InP, hetero-junction bipolar transistors, dynamic frequency divider
On-wafer de-embedding techniques from 0.1 to 110 GHz
Guoping Tang, Hongfei Yao, Xiaohua Ma, Zhi Jin, Xinyu Liu
doi: 10.1088/1674-4926/36/5/054012
key words: model, millimeter-wave, de-embed, TRL, LRM
A 10 Gsps 8 bit digital-to-analog converter with a built-in self-test circuit
Lei Zhou, Danyu Wu, Fan Jiang, Zhi Jin, Xinyu Liu
doi: 10.1088/1674-4926/34/12/125007
key words: DAC, BIST, SiGe HBT, ultra-high-speed, optical communication
A 23 GHz low power VCO in SiGe BiCMOS technology
Yinkun Huang, Danyu Wu, Lei Zhou, Fan Jiang, Jin Wu, Zhi Jin
doi: 10.1088/1674-4926/34/4/045003
key words: VCO, low power, SiGe BiCMOS
Planar InP-based Schottky barrier diodes for terahertz applications
Jingtao Zhou, Chengyue Yang, Ji Ge, Zhi Jin
doi: 10.1088/1674-4926/34/6/064003
key words: Schottky barrier diodes, terahertz, cuttoff frequency
