Effects of the p-AlInGaN/GaN superlattices' structure on the performance of blue LEDs

Na Liu, Xiaoyan Yi, Meng Liang, Enqing Guo, Xiangxu Feng, Zhao Si, Xiaoli Ji, Xuecheng Wei, Hongxi Lu, Zhiqiang Liu, Ning Zhang, Junxi Wang, Jinmin Li

doi: 10.1088/1674-4926/35/2/024010

key words: EBL, p-AlInGaN/GaN SLs, multiple quantum-wells

Enhancement of blue InGaN light-emitting diodes by using AlGaN increased composition-graded barriers

Yan Lei, Zhiqiang Liu, Miao He, Xiaoyan Yi, Junxi Wang, Jinmin Li, Shuwen Zheng, Shuti Li

doi: 10.1088/1674-4926/36/5/054006

key words: light-emitting diodes, composition-graded barriers, efficiency droop

Performance improvement of light-emitting diodes with double superlattices confinement layer

Cheng Cheng, Yan Lei, Zhiqiang Liu, Miao He, Zhi Li, Xiaoyan Yi, Junxi Wang, Jinmin Li, Deping Xiong

doi: 10.1088/1674-4926/39/11/114005

key words: double superlattices, LED, GaN

The design and fabrication of a GaN-based monolithic light-emitting diode array

Teng Zhan, Yang Zhang, Jing Li, Jun Ma, Zhiqiang Liu, Xiaoyan Yi, Guohong Wang, Jinmin Li

doi: 10.1088/1674-4926/34/9/094010

key words: GaN, LED, monolithic, array, high voltage

Advances and prospects in nitrides based light-emitting-diodes

Jinmin Li, Zhe Liu, Zhiqiang Liu, Jianchang Yan, Tongbo Wei, Xiaoyan Yi, Junxi Wang

doi: 10.1088/1674-4926/37/6/061001

key words: nitrides, light-emitting-diodes, MOCVD, multiple-quantum-well, p-doping

Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure

Chenglin Qi, Yang Huang, Teng Zhan, Qinjin Wang, Xiaoyan Yi, Zhiqiang Liu

doi: 10.1088/1674-4926/38/8/084005

key words: electrode-insulator-semiconductor (EIS), light emitting diodes (LEDs), tunneling mechanism, luminous uniformity, current spreading