Endurance characteristics of phase change memory cells

Ruru Huo, Daolin Cai, Bomy Chen, Yifeng Chen, Yuchan Wang, Yueqing Wang, Hongyang Wei, Qing Wang, Yangyang Xia, Dan Gao, Zhitang Song

doi: 10.1088/1674-4926/37/5/054009

key words: phase change memory, endurance, compositional change, threshold voltage

Improving the data retention of phase change memory by using a doping element in selected Ge₂Sb₂Te₅

Yaoyao Lu, Daolin Cai, Yifeng Chen, Shuai Yan, Lei Wu, Yuanguang Liu, Yang Li, Zhitang Song

doi: 10.1088/1674-4926/40/4/042402

key words: phase change memory, crystallization process, SET current pulse, small disturb current pulse, finite element simulation

Reactive ion etching of Si₂Sb₂Te₅ in CF₄/Ar plasma for a nonvolatile phase-change memory device

Juntao Li, Bo Liu, Zhitang Song, Dongning Yao, Gaoming Feng, Aodong He, Cheng Peng, Songlin Feng

doi: 10.1088/1674-4926/34/5/056001

key words: reactive ion etching, phase-change material, Si₂Sb₂Te₅

Chemical mechanical planarization of amorphous Ge₂Sb₂Te₅ with a soft pad

Aodong He, Bo Liu, Zhitang Song, Yegang Lü, Juntao Li, Weili Liu, Songlin Feng, Guanping Wu

doi: 10.1088/1674-4926/34/7/076002

key words: porosity, soft pad, chemical mechanical planarization, Ge₂Sb₂Te₅

The etching process and mechanism analysis of Ta-Sb₂Te₃ film based on inductively coupled plasma

Yongkang Xu, Sannian Song, Wencheng Fang, Chengxing Li, Zhitang Song

doi: 10.1088/1674-4926/41/12/122103

key words: new phase change material, inductively couple plasma, etching process, etching characteristics, mechanism

A low jitter PLL clock used for phase change memory

Xiao Hong, Houpeng Chen, Zhitang Song, Daolin Cai, Xi Li

doi: 10.1088/1674-4926/34/2/025012

key words: PLL, PFD, charge pump, VCO, PCM