The influence of Fe doping on the surface topography of GaN epitaxial material

Lei Cui, Haibo Yin, Lijuan Jiang, Quan Wang, Chun Feng, Hongling Xiao, Cuimei Wang, Jiamin Gong, Bo Zhang, Baiquan Li, Xiaoliang Wang, Zhanguo Wang

doi: 10.1088/1674-4926/36/10/103002

key words: Fe doping, GaN, MOCVD, surface topography

Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress

Zhen Yang, Jinyan Wang, Zhe Xu, Xiaoping Li, Bo Zhang, Maojun Wang, Min Yu, Jincheng Zhang, Xiaohua Ma, Yongbing Li

doi: 10.1088/1674-4926/35/1/014007

key words: AlGaN/GaN HEMT, reliability, semi-on DC stress, hot electron effect

Experimental and theoretical study of an improved breakdown voltage SOI LDMOS with a reduced cell pitch

Xiaorong Luo, Xiaowei Wang, Gangyi Hu, Yuanhang Fan, Kun Zhou, Yinchun Luo, Ye Fan, Zhengyuan Zhang, Yong Mei, Bo Zhang

doi: 10.1088/1674-4926/35/2/024007

key words: MOSFET, SOI, breakdown voltage, trench gate

Investigation of Coulomb scattering on sSi/Si_0.5Ge_0.5/sSOI quantum-well p-MOSFETs

Jiao Wen, Qiang Liu, Chang Liu, Yize Wang, Bo Zhang, Zhongying Xue, Zengfeng Di, Wenjie Yu, Qingtai Zhao

doi: 10.1088/1674-4926/37/9/094002

key words: SiGe, quantum-well, hole mobility, Coulomb scattering

Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS

Yongheng Jiang, Xiaorong Luo, Yanfei Li, Pei Wang, Ye Fan, Kun Zhou, Qi Wang, Xiarong Hu, Bo Zhang

doi: 10.1088/1674-4926/34/9/094005

key words: thin film SOI LDMOS, body contact, floating body effect, parasitic BJT effect

An L-shaped low on-resistance current path SOI LDMOS with dielectric field enhancement

Ye Fan, Xiaorong Luo, Kun Zhou, Yuanhang Fan, Yongheng Jiang, Qi Wang, Pei Wang, Yinchun Luo, Bo Zhang

doi: 10.1088/1674-4926/35/3/034011

key words: MOSFET, silicon-on-insulator, breakdown voltage, specific on-resistance

Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect

Qing Xu, Xiaorong Luo, Kun Zhou, Ruichao Tian, Jie Wei, Yuanhang Fan, Bo Zhang

doi: 10.1088/1674-4926/36/2/024010

key words: RESURF-enhanced, multiple-directional depletion effect, silicon-on-insulator, breakdown voltage, specific on-resistance

Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO₂ after high temperature oxidation

Yanyue Li, Xiaochuan Deng, Yunfeng Liu, Yanli Zhao, Chengzhan Li, Xixi Chen, Bo Zhang

doi: 10.1088/1674-4926/36/9/094003

key words: C-V characteristics, 4H-SiC MOS, post-oxidation annealing, SiC/SiO₂

A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect

Ruichao Tian, Xiaorong Luo, Kun Zhou, Qing Xu, Jie Wei, Bo Zhang, Zhaoji Li

doi: 10.1088/1674-4926/36/3/034007

key words: charge accumulation effect, super junction, breakdown voltage, specific on-resistance

Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS

Daoxun Wu, Lingli Jiang, Hang Fan, Jian Fang, Bo Zhang

doi: 10.1088/1674-4926/34/2/024004

key words: ESD, channel length, GGNMOS, current spreading