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  • The influence of Fe doping on the surface topography of GaN epitaxial material

    Lei Cui, Haibo Yin, Lijuan Jiang, Quan Wang, Chun Feng, Hongling Xiao, Cuimei Wang, Jiamin Gong, Bo Zhang, Baiquan Li, Xiaoliang Wang, Zhanguo Wang

    doi: 10.1088/1674-4926/36/10/103002

    key words: Fe doping, GaN, MOCVD, surface topography

  • Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress

    Zhen Yang, Jinyan Wang, Zhe Xu, Xiaoping Li, Bo Zhang, Maojun Wang, Min Yu, Jincheng Zhang, Xiaohua Ma, Yongbing Li

    doi: 10.1088/1674-4926/35/1/014007

    key words: AlGaN/GaN HEMT, reliability, semi-on DC stress, hot electron effect

  • Experimental and theoretical study of an improved breakdown voltage SOI LDMOS with a reduced cell pitch

    Xiaorong Luo, Xiaowei Wang, Gangyi Hu, Yuanhang Fan, Kun Zhou, Yinchun Luo, Ye Fan, Zhengyuan Zhang, Yong Mei, Bo Zhang

    doi: 10.1088/1674-4926/35/2/024007

    key words: MOSFET, SOI, breakdown voltage, trench gate

  • Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-well p-MOSFETs

    Jiao Wen, Qiang Liu, Chang Liu, Yize Wang, Bo Zhang, Zhongying Xue, Zengfeng Di, Wenjie Yu, Qingtai Zhao

    doi: 10.1088/1674-4926/37/9/094002

    key words: SiGe, quantum-well, hole mobility, Coulomb scattering

  • Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS

    Yongheng Jiang, Xiaorong Luo, Yanfei Li, Pei Wang, Ye Fan, Kun Zhou, Qi Wang, Xiarong Hu, Bo Zhang

    doi: 10.1088/1674-4926/34/9/094005

    key words: thin film SOI LDMOS, body contact, floating body effect, parasitic BJT effect

  • An L-shaped low on-resistance current path SOI LDMOS with dielectric field enhancement

    Ye Fan, Xiaorong Luo, Kun Zhou, Yuanhang Fan, Yongheng Jiang, Qi Wang, Pei Wang, Yinchun Luo, Bo Zhang

    doi: 10.1088/1674-4926/35/3/034011

    key words: MOSFET, silicon-on-insulator, breakdown voltage, specific on-resistance

  • Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect

    Qing Xu, Xiaorong Luo, Kun Zhou, Ruichao Tian, Jie Wei, Yuanhang Fan, Bo Zhang

    doi: 10.1088/1674-4926/36/2/024010

    key words: RESURF-enhanced, multiple-directional depletion effect, silicon-on-insulator, breakdown voltage, specific on-resistance

  • Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation

    Yanyue Li, Xiaochuan Deng, Yunfeng Liu, Yanli Zhao, Chengzhan Li, Xixi Chen, Bo Zhang

    doi: 10.1088/1674-4926/36/9/094003

    key words: C-V characteristics, 4H-SiC MOS, post-oxidation annealing, SiC/SiO2

  • A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect

    Ruichao Tian, Xiaorong Luo, Kun Zhou, Qing Xu, Jie Wei, Bo Zhang, Zhaoji Li

    doi: 10.1088/1674-4926/36/3/034007

    key words: charge accumulation effect, super junction, breakdown voltage, specific on-resistance

  • Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS

    Daoxun Wu, Lingli Jiang, Hang Fan, Jian Fang, Bo Zhang

    doi: 10.1088/1674-4926/34/2/024004

    key words: ESD, channel length, GGNMOS, current spreading

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