BSIM Model Research and Recent Progress
He Jin, Chan Mansun, Xi Xuemei, Wan Hui, Pin Su, Ali Niknejad, Hu Chenming
key words: compact modeling, BSIM5, BSIM4, BSIMSOI, device physics, MOSFETs
Forward gated-diode method for parameter extraction of MOSFETs
Zhang Chenfei, Ma Chenyue, Guo Xinjie, Zhang Xiufang, He Jin, Wang Guozeng, Yang Zhang, Liu Zhiwei
doi: 10.1088/1674-4926/32/2/024001
key words: forward gated-diode method
Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F--N stress tests
He Jin, Ma Chenyue, Wang Hao, Chen Xu, Zhang Chenfei, Lin Xinnan, Zhang Xing
doi: 10.1088/1674-4926/30/12/124004
key words: MOSFET degradation
Study on Interfacial SiO_2 Layer of Silicon Direct Bonding
He Jin , Wang Xin , Chen Xingbi
Closed Analytical Solution of Breakdown Voltage for Planar Junction and Lateral Curvature Effect
A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs
He Jin, Zhang Jian, Zhang Lining, Ma Chenyue, Chan Mansun
doi: 10.1088/1674-4926/30/2/024001
key words: non-classical?MOS?transistor
Benchmarktests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK
Niu Xudong, Li Bo, Song Yan, Zhang Lining, He Jin
doi: 10.1088/1674-4926/30/3/034006
key words: compact model
非掺杂对称双栅的基于完整表面电势的核心模型
He Jin, Zhang Lining, Zhang Jian, Fu Yue, Zheng Rui, Zhang Xing
key words: bulk MOSFET limit, non-classical CMOS, double-gate MOSFET, device physics, surface potential-based model
A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks
He Jin, Ma Chenyue, Zhang Lining, Zhang Jian, Zhang Xing
doi: 10.1088/1674-4926/30/8/084003
key words: high-k gate stack
Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region
He Jin, Zheng Rui, Zhang Lining, Zhang Jian, Lin Xinnan, Chan Mansun
doi: 10.1088/1674-4926/31/6/064001
key words: non-classical CMOS
