Influence of initial growth conditions and Mg-surfactant on the quality of GaN film grown by MOVPE

Junsong Cao, Xin Lü, Lubing Zhao, Shuang Qu, Wei Gao

doi: 10.1088/1674-4926/36/2/023005

key words: metalorganic vapor phase epitaxy, gallium nitride, high resolution X-ray diffraction