Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth
Li Zehong, Ren Min, Zhang Bo, Ma Jun, Hu Tao, Zhang Shuai, Wang Fei, Chen Jian
doi: 10.1088/1674-4926/31/8/084002
key words: superjunction, deep trench etching, epitaxial growth, power MOSFET
智能型高压SENSFET器件的设计分析和实现
Li Zehong, Wang Xiaosong, Wang Yiming, Yi Kun, Zhang Bo, Li Zhaoji
key words: smart power integrated circuit, high voltage SENSFET, double RESURF, JFET
功率VDMOS器件的ESD瞬态模型
Li Zehong, Zhou Chunhua, Hu Yonggui, Liu Yong, Zhang Bo, Xu Shiliu
key words: VDMOS, ESD, equivalent circuit, initial condition, transient model
具有n埋层pSOI三明治结构的射频功率LDMOS的输出特性
Li Zehong, Wu Lijuan, Zhang Bo, Li Zhaoji
key words: n-buried-pSOI, sandwiched, parasitic capacitance, output characteristics, RF power LDMOS
Novel lateral IGBT with n-region controlled anode on SOI substrate
Chen Wensuo, Xie Gang, Zhang Bo, Li Zehong, Li Zhaoji
doi: 10.1088/1674-4926/30/11/114005
key words: turn-off time, on-state voltage drop, NDR, power ICs
Trench gate IGBT structure with floating P region
Qian Mengliang, Li Zehong, Zhang Bo, Li Zhaoji
doi: 10.1088/1674-4926/31/2/024003
key words: TAC-IGBT
Insulated gate bipolar transistor with trench gate structure of accumulation channel
doi: 10.1088/1674-4926/31/3/034002
key words: ACT-IGBT
Carrier stored trench-gate bipolar transistor with p-floating layer
Ma Rongyao, Li Zehong, Hong Xin, Zhang Bo
doi: 10.1088/1674-4926/31/2/024004
key words: p-floating layer
A new short-anoded IGBT with high emission efficiency
Chen Weizhong, Zhang Bo, Li Zehong, Ren Min, Li Zhaoji
doi: 10.1088/1674-4926/33/11/114003
key words: short-anode insulated-gate bipolar transistor, snapback, turn-off, tradeoff
n埋层PSOI结构射频功率LDMOS的输出特性
Wang Xiaosong, Li Zehong, Wang Yiming, Zhang Bo, Li Zhaoji
key words: PSOI, buried n layer, RF power LDMOS, output characteristics
