A novel high figure-of-merit SOI SJ LDMOS with ultra-strong charge accumulation effect

Ruichao Tian, Xiaorong Luo, Kun Zhou, Qing Xu, Jie Wei, Bo Zhang, Zhaoji Li

doi: 10.1088/1674-4926/36/3/034007

key words: charge accumulation effect, super junction, breakdown voltage, specific on-resistance

Ultralow specific on-resistance high voltage trench SOI LDMOS with enhanced RESURF effect

Qing Xu, Xiaorong Luo, Kun Zhou, Ruichao Tian, Jie Wei, Yuanhang Fan, Bo Zhang

doi: 10.1088/1674-4926/36/2/024010

key words: RESURF-enhanced, multiple-directional depletion effect, silicon-on-insulator, breakdown voltage, specific on-resistance