Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Rui Zhou, Cui Yu, Chuangjie Zhou, Jianchao Guo, Zezhao He, Yanfeng Wang, Feng Qiu, Hongxing Wang, Shujun Cai, Zhihong Feng

doi: 10.1088/1674-4926/41/12/122801

key words: diamond, transistor, trap, defect, power density