ITO表面处理对有机电致发光器件性能的影响
Wang Jing, Jiang Wenlong, Wang Guangde, Wang Lizhong, Wang Jin, Han Qiang, Ding Guiying, Liu Shiyong
key words: organic light-emitting device, indium tin oxide anode, polishing
快速预热处理对大直径CZ-Si中FPDs及清洁区的影响
Zhang Jianqiang, Liu Caichi, Zhou Qigang, Wang Jing, Hao Qiuyan, Sun Shilong, Zhao Liwei, Teng Xiaoyun
key words: CZSi, void defects, flow pattern defects(FPDs), RTA, MDZ
采用SiGe虚拟衬底高迁移率应变硅材料的制备和表征
Liang Renrong, Zhang Kan, Yang Zongren, Xu Yang, Wang Jing, Xu Jun
key words: strained Si, RPCVD, SiGe virtual substrate, mobility enhancement
Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs
Zhao Shuo, Guo Lei, Wang Jing, Xu Jun, Liu Zhihong
doi: 10.1088/1674-4926/30/10/104001
key words: hole mobility enhancement
Fabrication of strained Ge film using a thin SiGe virtual substrate
Guo Lei, Zhao Shuo, Wang Jing, Liu Zhihong, Xu Jun
doi: 10.1088/1674-4926/30/9/093005
key words: strained Ge, SiGe virtual substrate, RPCVD, UHVCVD
Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse
Xi Xiaowen, Chai Changchun, Ren Xingrong, Yang Yintang, Ma Zhenyang, Wang Jing
doi: 10.1088/1674-4926/31/7/074009
key words: electromagnetic pulse, bipolar transistor, current-mode second breakdown, external component
A PNPN tunnel field-effect transistor with high-k gate and low-k fringe dielectrics
Cui Ning, Liang Renrong, Wang Jing, Zhou Wei, Xu Jun
doi: 10.1088/1674-4926/33/8/084004
key words: TFET
Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath
Wang Wei, Wang Jing, Zhao Mei, Liang Renrong, Xu Jun
doi: 10.1088/1674-4926/33/10/102004
key words: Schottky barrier
快速退火气氛对300mm硅片内洁净区和氧沉淀形成的影响
Feng Quanlin, Shi Xunda, Liu Bin, Liu Zuoxing, Wang Jing, Zhou Qigang
key words: denuded zone, oxygen precipitates, silicon wafer, intrinsic gettering, RTA
电子器件的失效分析
Wang Kaijian, Li Guoliang, Zhang Jun, Wang Jing
key words: electron, components, failure, examines
